Transistor
2SC3935
Silicon NPN epitaxial planer type
For high-frequency amplification/oscillation/mixing
Unit: mm
2.1鹵0.1
s
Features
q
q
0.425
1.25鹵0.1
0.425
q
High transition frequency f
T
.
Small collector output capacitance C
ob
and common base reverse
transfer capacitance C
rb
.
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
(Ta=25藲C)
0.65
1
2.0鹵0.2
1.3鹵0.1
0.65
3
2
0.9鹵0.1
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
15
10
3
50
150
150
鈥?5 ~ +150
Unit
V
V
V
mA
mW
藲C
藲C
0.7鹵0.1
0 to 0.1
0.2鹵0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC鈥?0
S鈥揗ini Type Package
Marking symbol :
1S
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Common emitter reverse transfer capacitance
Base time constant
h
FE
ratio
(Ta=25藲C)
Symbol
I
CBO
I
CEO
V
CEO
V
EBO
h
FE1
h
FE2
V
CE(sat)
f
T
C
ob
C
rb
r
bb
' 路 C
C
h
FE(RATIO)
Conditions
V
CB
= 10V, I
E
= 0
V
CE
= 10V, I
B
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10碌A, I
C
= 0
V
CE
= 2.4V, I
C
= 7.2mA
V
CE
= 2.4V, I
C
= 100碌A
I
C
= 20mA, I
B
= 4mA
V
CE
= 2.4V, I
C
= 7.2mA, f = 200MHz
V
CB
= 4V, I
E
= 0, f = 1MHz
V
CB
= 4V, I
E
= 0, f = 1MHz
V
CB
= 4V, I
E
= 鈥?mA, f = 31.9MHz
V
CE
= 2.4V, I
C
= 100碌A
V
CE
= 2.4V, I
C
= 7.2mA
0.75
1.4
1.9
0.9
0.25
11.8
10
3
75
75
0.5
2.5
1.1
0.35
13.5
1.6
V
GHz
pF
pF
ps
220
min
typ
max
1
10
Unit
碌A
碌A
V
V
*1
h
FE
Rank classification
P
75 ~ 130
Q
110 ~ 220
Rank
h
FE
0.15
鈥?.05
+0.1
s
Absolute Maximum Ratings
0.2
0.3
鈥?
+0.1
1
1
2
