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2SC3932T Datasheet

  • 2SC3932T

  • TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 50MA I(C) | SC-70

  • 87.28KB

  • 4頁(yè)

  • ETC

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Transistors
2SC3932
Silicon NPN epitaxial planer type
Unit: mm
(0.425)
For high-frequency amplification / oscillation / mixing
0.3
+0.1
鈥?.0
3
0.15
+0.10
鈥?.05
1.25
鹵0.10
鈥?/div>
High transition frequency f
T
鈥?/div>
S-mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
10擄
1
2
0.2
鹵0.1
0 to 0.1
0.9
鹵0.1
0.9
+0.2
鈥?.1
(0.65) (0.65)
1.3
鹵0.1
2.0
鹵0.2
I
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
30
20
3
50
150
150
鈭?5
to
+150
Unit
V
V
V
mA
mW
擄C
擄C
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
S-Mini Type Package
Marking Symbol: R
I
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector to base voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Transition frequency
*
Common emitter reverse transfer
capacitance
Power gain
Note) *: Rank classification
Rank
f
T
(MHz)
Marking symbol
T
S
No-rank
Symbol
V
CBO
V
EBO
h
FE
V
BE
f
T
C
re
C
rb
PG
Conditions
I
C
=
100
碌A(chǔ),
I
E
=
0
I
E
=
10
碌A(chǔ),
I
C
=
0
V
CB
=
10 V, I
E
= 鈭?
mA
V
CB
=
10 V, I
E
= 鈭?
mA
V
CB
=
10 V, I
E
= 鈭?5
mA, f
=
200 MHz
V
CB
=
10 V, I
E
= 鈭?
mA, f
=
10.7 MHz
V
CE
=
6 V, I
C
=
0, f
=
1 MHz
V
CB
=
10 V, I
E
= 鈭?
mA, f
=
200 MHz
800
1
0.8
20
Min
30
3
25
720
1 600
1.5
250
mV
MHz
pF
pF
dB
Typ
Max
Unit
V
V
800 to 1 400 1 000 to 1 600 800 to 1 600
RT
RS
R
Product of no-rank is not classified and have no indication for rank.
5擄
I
Features
2.1
鹵0.1
1

2SC3932T相關(guān)型號(hào)PDF文件下載

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  • 英文版
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