Transistor
2SC3904
Silicon NPN epitaxial planer type
For 2GHz band low-noise amplification
Unit: mm
2.8
鈥?.3
+0.2
s
Features
q
q
0.65鹵0.15
1.5
鈥?.05
+0.25
0.65鹵0.15
0.95
2
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
1.1
鈥?.1
(Ta=25藲C)
Ratings
15
10
2
65
200
150
鈥?5 ~ +150
Unit
V
V
V
mA
mW
藲C
藲C
1:Base
2:Emitter
3:Collector
JEDEC:TO鈥?36
EIAJ:SC鈥?9
Mini Type Package
Marking symbol :
3S
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Transition frequency
Collector output capacitance
Foward transfer gain
Maximum unilateral power gain
Noise figure
(Ta=25藲C)
Symbol
I
CBO
I
EBO
h
FE
f
T
C
ob
| S
21e
|
2
GUM
NF
Conditions
V
CB
= 10V, I
E
= 0
V
EB
= 1V, I
C
= 0
V
CE
= 8V, I
C
= 20mA
V
CE
= 8V, I
C
= 20mA, f = 0.8GHz
V
CB
= 10V, I
E
= 0, f = 1MHz
V
CE
= 8V, I
C
= 20mA, f = 1.5GHz
V
CE
= 8V, I
C
= 20mA, f = 1.5GHz
V
CE
= 8V, I
C
= 7mA, f = 1.5GHz
7
50
7.0
120
8.5
0.6
9
10
2.2
3
1
min
typ
max
1
1
300
GHz
pF
dB
dB
dB
Unit
碌A
碌A
0 to 0.1
0.1 to 0.3
0.4鹵0.2
0.8
0.16
鈥?.06
+0.2
+0.1
0.4
鈥?.05
+0.1
High transition frequency f
T
.
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
0.95
2.9
鈥?.05
1
1.9鹵0.2
+0.2
3
1.45
1
1
2
