鈻?/div>
Absolute Maximum Ratings
T
C
=
25擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (E-B short)
Collector-emitter voltage 2SC3824
(Base open)
2SC3824A
V
EBO
I
C
I
CP
P
C
T
a
=
25擄C
T
j
T
stg
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
CEO
Rating
900
900
800
900
7
1
2
15
1.3
150
鈭?5
to
+150
擄C
擄C
V
A
A
W
Unit
V
V
V
0.9
鹵0.1
0藲 to 0.15藲
1: Base
2: Collector
3: Emitter
I-G1 Package
Note) Self-supported type package is also prepared.
鈻?/div>
Electrical Characteristics
T
C
=
25擄C
鹵
3擄C
Parameter
Collector-emitter voltage
(Base open)
2SC3824
2SC3824A
I
CBO
I
EBO
h
FE1
h
FE2
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
V
CB
=
900 V, I
E
=
0
V
EB
=
7 V, I
C
=
0
V
CE
=
5 V, I
C
=
0.05 A
V
CE
=
5 V, I
C
=
0.5 A
I
C
=
0.2 A, I
B
=
0.04 A
I
C
=
0.2 A, I
B
=
0.04 A
V
CE
=
10 V, I
C
=
0.05 A, f
=
1 MHz
I
C
=
0.2 A
I
B1
=
0.04 A, I
B2
= 鈭?/div>
0.08 A
V
CC
=
250 V
4
1.0
3.0
1.0
6
3
1.5
1.0
V
V
MHz
碌s
碌s
碌s
Symbol
V
CEO
Conditions
I
C
=
1 mA, I
B
=
0
Min
800
900
50
50
碌A(chǔ)
碌A(chǔ)
錚?/div>
Typ
Max
Unit
V
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.5
鹵0.2
鈥?/div>
High-speed switching
鈥?/div>
High collector-base voltage (Emitter open) V
CBO
鈥?/div>
I type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
12.6
鹵0.3
7.2
鹵0.3
(1.0)
(1.0)
2.5
鹵0.2
鈻?/div>
Features
Publication date: March 2003
SJD00113AED
1
2SC3824相關(guān)型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 200MA I(C) | TO-5
ETC
-
英文版
TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 30MA I(C) | TO-18
ETC
-
英文版
ETC
-
英文版
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 100MA I(C) | TO-98VA...
ETC
-
英文版
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 100MA I(C) | TO-98VA...
ETC
-
英文版
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 50MA I(C) | TO-92
ETC
-
英文版
泰豐
-
英文版
LICON NPN EPITAXIAL PLANAR TRANSISTOR
ETC
-
英文版
LICON NPN EPITAXIAL PLANAR TRANSISTOR
ETC [ETC]
-
英文版
NPN EPITAXIAL PLANAR TYPE (TV FINAL PICTURE IF AMPLIFIER APP...
TOSHIBA
-
英文版
NPN EPITAXIAL PLANAR TYPE (TV FINAL PICTURE IF AMPLIFIER APP...
TOSHIBA [Toshib...
-
英文版
2SC388
ETC
-
英文版
NPN Epitaxial Planar Silicon Transistor
Sanyo
-
英文版
NPN EPITAXIAL PLANAR TYPE
-
英文版
TRANSISTOR | BJT | DARLINGTON | NPN | 30V V(BR)CEO | 3A I(C)...
ETC
-
英文版
TRANSISTOR (UHF BAND POWER AMPLIFIER APPLICATIONS)
TOSHIBA
-
英文版
TRANSISTOR (UHF BAND POWER AMPLIFIER APPLICATIONS)
TOSHIBA [T...
-
英文版
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
ETC
-
英文版
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
ETC [ETC]
-
英文版
Silicon NPN Epitaxial
KEXIN [Gua...
1
2
3
4
