Transistor
2SC3811
Silicon NPN epitaxial planer type
For high speed switching
Unit: mm
5.0鹵0.2
4.0鹵0.2
q
q
High-speed switching.
Low collector to emitter saturation voltage V
CE(sat)
.
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(Ta=25藲C)
Ratings
40
40
5
300
100
400
150
鈥?5 ~ +150
Unit
V
V
V
mA
mA
mW
藲C
藲C
13.5鹵0.5
5.1鹵0.2
s
Features
0.45
鈥?.1
1.27
+0.2
0.45
鈥?.1
1.27
+0.2
1 2 3
2.3鹵0.2
2.54鹵0.15
1:Emitter
2:Base
3:Collector
JEDEC:TO鈥?2
EIAJ:SC鈥?3A
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Turn-off time
Storage time
(Ta=25藲C)
Symbol
I
CBO
I
EBO
h
FE*
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
off
t
stg
Refer to the measurment circuit
Conditions
V
CB
= 40V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 1V, I
C
= 10mA
I
C
= 10mA, I
B
= 1mA
I
C
= 10mA, I
B
= 1mA
V
CB
= 10V, I
E
= 鈥?0mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
450
2
17
17
10
6
60
0.17
min
typ
max
0.1
0.1
200
0.25
1.0
V
V
MHz
pF
ns
ns
ns
Unit
碌A
碌A
*
h
FE
Rank classification
Q
60 ~ 120
R
90 ~ 200
h
FE
Rank
1
1
2
3
