Ordering number:EN2005A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1416/2SC3646
High-Voltage Switching Applications
Features
路 Adoption of FBET, MBIT processes.
路 High breakdown voltage and large current capacity.
路 Fast switching time.
路 Very small size making it easy to provide high-
density, small-sized hybrid ICs.
Package Dimensions
unit:mm
2038
[2SA1416/2SC3646]
E : Emitter
C : Collector
B : Base
( ) : 2SA1416
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Conditions
SANYO : PCP
(Bottom view)
Ratings
(鈥?120
(鈥?100
(鈥?6
(鈥?1
(鈥?2
500
Unit
V
V
V
A
A
mW
W
Moutned on ceramic board (250mm
脳0.8mm)
2
1.3
150
鈥?5 to +150
Tj
Tstg
藲C
藲C
Electrical Characteristics
at Ta = 25藲C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Votage
Turn-ON Time
Storage Time
Fall Time
Symbol
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
VCB=(鈥?100V, IE=0
VEB=(鈥?4V, IC=0
VCE=(鈥?5V, IC=(鈥?100mA
VCE=(鈥?10V, IC=(鈥?100mA
VCB=(鈥?10V, f=1MHz
IC=(鈥?400mA, IB=(鈥?40mA
100*
120
(13)
8.5
(鈥?.2)
0.1
IC=(鈥?400mA, IB=(鈥?40mA
V(BR)CBO IC=(鈥?10碌A(chǔ), IE=0
V(BR)CEO IC=(鈥?1mA, RBE=鈭?/div>
V(BR)EBO IE=(鈥?10碌A(chǔ), IC=0
ton
tstg
tf
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
(鈥?0.85
(鈥?120
(鈥?100
(鈥?6
(80)
80
(700)
850
(40)
50
(鈥?.6)
0.4
(鈥?1.2
Conditions
Ratings
min
typ
max
(鈥?100
(鈥?100
400*
MHz
pF
pF
V
V
V
V
V
V
ns
ns
ns
ns
ns
ns
Unit
nA
nA
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/3277KI/N255MW, TS No.2005-1/4
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