DATA SHEET
SILICON TRANSISTORS
2SC3623, 3623A
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND SWITCHING
FEATURES
鈥?High h
FE
:
h
FE
= 1000 to 3200 @V
CE
= 5.0 V, I
C
= 1.0 mA
鈥?Low V
CE(sat)
:
V
CE(sat)
= 0.07 V TYP. @I
C
/I
B
= 50 mA/5.0 mA
鈥?High V
EBO
:
V
EBO
: 12 V (2SC3623)
V
EBO
: 15 V (2SC3623A)
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25擄C)
擄
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
P
T
T
j
T
stg
12
150
250
150
鈭?5
to +150
Ratings
2SC3623 2SC3623A
60
50
15
Unit
V
V
V
mA
mW
擄C
擄C
Electrode connection
1. Emitter (E)
2. Collector (C)
3. Base (B)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13521EJ4V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
漏
1998
2002
1
2
3
4
