DATA SHEET
DATA SHEET
SILICON TRANSISTOR
2SC3545
UHF OSCILLATOR AND MIXER
NPN SILICON EPITAXIAL TRANSISTOR
MINI MOLD
DESCRIPTION
The 2SC3545 is an NPN silicon epitaxial transistor intended for use as
UHF oscillator and mixer in a tuner of a TV receiver.
The device features stable oscillation and small frequency drift against
any change of the supply voltage and the ambient temperature.
It is designed for use in small type equipments especially
recommended for Hybrid Integrated Circuit and other applications.
PACKAGE DIMENSIONS
(Units: mm)
2.8鹵0.2
0.4
鈭?.05
+0.1
1.5
0.65
鈭?.15
+0.1
0.95
0.95
FEATURES
鈥?High Gain Bandwidth Procuct; f
T
= 2 000 MHz TYP.
鈥?Low Collector to Base Time Constant; C
C
r
b鈥檅
= 4 ps TYP.
鈥?Low Feedback Capacitance; C
re
= 0.48 pF TYP.
2.9鹵0.2
2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Maximum Voltages and Current
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Maximum Power Dissipation
Total Power Dissipation
Maximum Temperature
Junction Temperature
Storage Temperature
0.3
Marking
P
T
T
j
T
stg
150
125
65 to +125
mW
C
C
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
CHARACTERISTIC
Collector Cutoff Current
DC Current Gain
Collector Saturation Voltage
Gain Bandwidth Product
Output Capacitance
Collector to Base Time Constant
SYMBOL
I
CBO
h
FE
V
CE(sat)
f
T
C
ob
C
C
r
b鈥檅
1.3
2.0
0.48
4
1.0
10
50
100
MIN.
TYP.
MAX.
0.1
250
0.5
V
MHz
pF
ps
UNIT
TEST CONDITIONS
V
CB
= 12 V, I
E
= 0
V
CE
= 10 V, I
C
= 5.0 mA
I
C
= 10 mA, I
B
= 1.0 mA
V
CE
= 10 V, I
E
=
5.0 mA
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
V
CE
= 10 V, I
E
=
5.0 mA, f = 31.9 MHz
A
h
FE
Classification
Class
Marking
h
FE
M/P *
T42
50 to 100
L/Q *
T43
70 to 140
K/R *
T44
120 to 250
* Old Specification / New Specification
Document No. P10358EJ2V1DS00 (2nd edition)
Date Published March 1997 N
Printed in Japan
0 to 0.1
V
CBO
V
CEO
V
EBO
I
C
30
15
3.0
50
V
V
V
mA
1.1 to 1.4
漏
0.16
鈭?.06
+0.1
0.4
鈭?.05
+0.1
1
3
1984