鈭?/div>
2.0
max
60
typ
250
typ
V
pF
20.0min
4.0max
Silicon NPN Epitaxial Planar Transistor
(Complement to type 2SA1294)
s
Absolute maximum ratings
(Ta=25擄C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC3263
230
230
5
15
4
130(Tc=25擄C)
150
鈥?5 to +150
Unit
V
V
V
A
A
W
擄C
擄C
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
Conditions
V
CB
=230V
V
EB
=5V
I
C
=25mA
V
CE
=4V, I
C
=5A
I
C
=5A, I
B
=0.5A
V
CE
=12V, I
E
=鈥?A
V
CB
=10V, f=1MHz
External Dimensions
MT-100(TO3P)
5.0
鹵0.2
15.6
鹵0.4
9.6
2.0
1.8
4.8
鹵0.2
2.0
鹵0.1
Unit
碌
A
碌
A
19.9
鹵0.3
4.0
V
a
b
酶3.2
鹵0.1
MHz
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
1.4
鈭梙
FE
Rank O(50 to 100), Y(70 to 140)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
60
R
L
(鈩?
12
I
C
(A)
5
V
BB1
(V)
10
V
BB2
(V)
鈥?
I
B1
(mA)
500
I
B2
(mA)
鈥?00
t
on
(
碌
s)
0.30typ
t
stg
(
碌
s)
2.40typ
t
f
(
碌
s)
0.50typ
5.45
鹵0.1
B
C
E
5.45
鹵0.1
Weight : Approx 6.0g
a. Type No.
b. Lot No.
I
C
鈥?V
CE
Characteristics
(Typical)
0A
3.
V
CE
(sat) 鈥?I
B
Characteristics
(Typical)
Co l l e c t o r - E m i tt e r Sa t u r a t i o n V o l t a ge V
CE(sa t)
(V )
3
I
C
鈥?V
B E
Temperature Characteristics
(Typical)
15
( V
C E
= 4V )
15
0
2.
A
5
1.
A
A
1.0
600
mA
Co l l e c t o r C ur r en t I
C
( A )
10
200m
A
2
C ol l e c t o r C ur r en t I
C
( A )
400
mA
10
5
1
50mA
I
C
= 10 A
5
5藲C
12
5A
0
0
0
0
1
2
3
4
0
0.5
1. 0
1 .5
2.0
0
25藲
I
B
=20mA
as
eT
em
Ca
p
se
Tem
)
鈥?0
p)
藲C
(Ca
se
Tem
p)
100mA
(C
C(
1
B a s e - Em i t t o r Vo l t a g e V
BE
( V )
2
C ol le ct o r - Em i t t er V ol ta ge V
C E
( V)
Bas e C ur r en t I
B
( A)
(V
C E
= 4 V )
200
D C C ur re nt Ga i n h
FE
DC C ur re nt Ga i n h
FE
200
1 25 藲 C
100
100
( V
C E
= 4 V)
Transient Thermal Resistance
胃
j- a
( 藲 C / W )
h
FE
鈥?I
C
Characteristics
(Typical)
h
F E
鈥?I
C
Temperature Characteristics
(Typical)
胃
j - a
鈥?t Characteristics
3
Typ
25 藲 C
鈥?30 藲 C
1
0 .5
50
50
10
0.02
0. 1
0.5
1
5
10 15
10
0 .0 2
0 .1
0.5
1
5
10 15
0 .1
1
10
100
T i m e t( m s )
1 00 0 2 0 00
C ol l e ct or C urre nt I
C
(A )
C o ll e ct o r Cu r r e nt I
C
( A)
f
T
鈥?I
E
Characteristics
(Typical)
(V
C E
= 12 V )
100
40
Safe Operating Area
(Single Pulse)
13 0
Pc 鈥?T a Derating
10
80
Cu t- off Fr eq ue n c y f
T
( MH
Z
)
10
m
M a xim u m P o we r Di s s i p a t i o n P
C
( W )
s
10 0
W
Typ
60
Co llec to r Cu r r e n t I
C
( A )
DC
ith
5
In
fin
ite
he
at
si
nk
40
1
0 .5
Without Heatsink
Natural Cooling
50
20
W i t h o u t H e a ts i n k
0
鈥?.02
0 .1
鈥?0. 1
鈥?
鈥?0
3
10
1 00
3 00
Em i t t er C ur re nt I
E
(A )
Co l le c to r - Em it t er Vo l ta ge V
C E
( V)
3. 5
0
0
25
50
75
100
1 25
150
A m bi en t T e m p e r a t ur e T a ( 藲 C )
63
SANKEN
1
