DATA SHEET
SILICON TRANSISTORS
2SC2958, 2959
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS
FEATURES
鈥?Ideal for use of high voltage current such as TV vertical
deflection (drive and output), audio output, pin cushion
correction
鈥?Complementary transistor with 2SA1221 and 2SA1222
V
CEO
= 140 V: 2SA1221/2SC2958
V
CEO
= 160 V: 2SA1222/2SC2959
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25擄C)
擄
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
P
T
T
j
T
stg
Ratings
160
140/160
5.0
500
1.0
1.0
150
鈭?5
to +150
Unit
V
V
V
mA
A
W
擄C
擄C
* PW
鈮?/div>
10 ms, duty cycle
鈮?/div>
50%
ELECTRICAL CHARACTERISTICS (Ta = 25擄C)
擄
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
DC base voltage
Collector saturation voltage
Base saturation voltage
Output capacitance
Gain bandwidth product
Symbol
I
CBO
I
EBO
h
FE
**
V
BE
**
V
CE(sat)
**
V
BE(sat)
**
C
ob
f
T
Conditions
V
CB
= 100 V, I
E
= 0
V
EB
= 5.0 V, I
C
= 0
V
CE
= 2.0 V, I
C
= 100 mA
V
CE
= 5.0 V, I
C
= 20 mA
I
C
= 1.0 A, I
B
= 0.2 A
I
C
= 1.0 A, I
B
= 0.2 A
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
V
CE
= 10 V, I
E
=
鈭?0
mA
30
100
0.6
150
0.64
0.32
1.1
13
60
MIN.
TYP.
MAX.
200
200
400
0.7
0.7
1.3
30
V
V
V
pF
MHz
Unit
nA
nA
** Pulse test PW
鈮?/div>
350
碌
s, duty cycle
鈮?/div>
2% per pulsed
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16150EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
漏
2002
1998
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