Transistor
2SC2925
Silicon NPN epitaxial planer type
For low-frequency output amplification
Unit: mm
5.0鹵0.2
4.0鹵0.2
q
q
High foward current transfer ratio h
FE
.
Low collector to emitter saturation voltage V
CE(sat)
.
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(Ta=25藲C)
Ratings
60
50
15
1.5
0.7
750
150
鈥?5 ~ +150
Unit
V
V
V
13.5鹵0.5
5.1鹵0.2
s
Features
0.45
鈥?.1
1.27
+0.2
0.45
鈥?.1
1.27
+0.2
2.3鹵0.2
A
A
mW
藲C
藲C
1 2 3
2.54鹵0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO鈥?2
EIAJ:SC鈥?3A
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25藲C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
V
CE
= 20V, I
B
= 0
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CE
= 10V, I
C
= 150mA
I
C
= 500mA, I
B
= 50mA
V
CB
= 10V, I
E
= 鈥?0mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
60
50
15
400
1000
0.15
200
11
15
2000
0.4
V
MHz
pF
min
typ
max
1
10
Unit
碌A(chǔ)
碌A(chǔ)
V
V
V
*
h
FE
Rank classification
R
400 ~ 800
S
T
h
FE
600 ~ 1200 1000 ~ 2000
Rank
1
1
2
3
