鈭?/div>
2.0
max
60
typ
200
typ
V
MHz
pF
20.0min
4.0max
Silicon NPN Epitaxial Planar Transistor
(Complement to type 2SA1215)
(Ta=25擄C)
Unit
V
V
V
A
A
W
擄C
擄C
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
Conditions
V
CB
=160V
V
EB
=5V
I
C
=25mA
V
CE
=4V, I
C
=5A
I
C
=5A, I
B
=0.5A
V
CE
=12V, I
E
=鈥?A
V
CB
=10V, f=1MHz
External Dimensions
MT-200
36.4
鹵0.3
24.4
鹵0.2
2-酶3.2
鹵0.1
9
7
21.4
鹵0.3
2.1
6.0
鹵0.2
Unit
碌
A
碌
A
V
a
b
2
3
1.05
+0.2
-0.1
5.45
鹵0.1
B
C
E
5.45
鹵0.1
0.65
+0.2
-0.1
3.0
+0.3
-0.1
鈭梙
FE
Rank O(50 to 100), P(70 to 140), Y(90 to 180)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
60
R
L
(鈩?
12
I
C
(A)
5
V
B2
(V)
鈥?
I
B1
(mA)
500
I
B2
(mA)
鈥?00
t
on
(
碌
s)
0.2typ
t
stg
(
碌
s)
1.5typ
t
f
(
碌
s)
0.35typ
Weight : Approx 18.4g
a. Type No.
b. Lot No.
I
C
鈥?V
C E
Characteristics
(Typical)
0m
60
0
mA
500
mA
V
C E
( sa t) 鈥?I
B
Characteristics
(Typical)
C ol l e c t o r - E m i tt e r S at u r a t i o n V o l t a g e V
C E(s a t)
(V )
3
I
C
鈥?V
BE
Temperature Characteristics
(Typical)
15
( V
CE
=4 V )
15
40
0mA
300
mA
75
A
C o l l e c t or C u r r e n t I
C
( A)
10
150mA
2
C o l l e c to r C u r r e n t I
C
( A )
200m
A
10
10 0m A
p)
as
eT
5
50m A
1
I
C
= 1 0A
5A
0
5
(C
5藲C
12
藲C
0
0
1
2
3
4
0
0. 2
0 .4
0.6
0. 8
1.0
0
0
鈥?0
25
1
Ba s e- E m i t t or V o l t a ge V
BE
( V )
藲C
I
B
=20mA
(Ca
se
Tem
p)
em
2
C ol l e ct or - Em it te r V ol tag e V
C E
(V)
Ba s e C ur r en t I
B
( A)
(V
C E
=4 V )
200
D C C ur re nt Ga i n h
FE
DC C ur re nt Ga i n h
FE
200
1 2 5藲 C
100
( V
C E
= 4 V)
Transient Thermal Resistance
胃
j -a
( 藲C /W )
h
F E
鈥?I
C
Characteristics
(Typical)
h
F E
鈥?I
C
Temperature Characteristics
(Typical)
胃
j - a
鈥?t Characteristics
2
Typ
1
100
2 5藲 C
鈥? 0藲 C
50
0.5
50
10
0.02
0.1
0. 5
1
10 15
20
0.02
0 .1
0 .5
1
5
1 0 15
0.1
1
10
10 0
Time t(ms)
1 00 0
2 00 0
C ol l e ct o r Cur ren t I
C
(A )
C o ll e ct o r Cu r r e n t I
C
( A)
f
T
鈥?I
E
Characteristics
(Typical)
(V
C E
=1 2 V )
80
Safe Operating Area
(Single Pulse)
40
1 60
10
Pc 鈥?Ta Derating
Cu t-o ff Fre q ue nc y f
T
( M H
Z
)
Typ
60
Co llec to r Cu rr e n t I
C
( A )
10
D
C
m
s
Ma x imu m P owe r D is s i p a t i o n P
C
(W )
1 20
W
ith
In
fin
5
ite
he
40
80
at
si
nk
20
1
Without Heatsink
Natural Cooling
40
0 .5
0
鈥?.02
0 .3
鈥?0. 1
鈥?
鈥?0
2
10
10 0
200
5
0
W i t h o ut H e at s i n k
0
25
50
75
100
125
150
Em it t er Cu rre nt I
E
( A)
C ol l ec t or - Em i tt e r Vol t ag e V
C E
( V)
Am b i e n t T e m p er at u r e T a ( 藲 C )
60
SANKEN
1
