Transistor
2SC2671(F)
Silicon NPN epitaxial planer type
For UHF band low-noise amplification
Unit: mm
5.0鹵0.2
4.0鹵0.2
q
q
q
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
REB
(Ta=25藲C)
Ratings
15
14
2
80
600
150
鈥?5 ~ +150
Unit
V
V
V
mA
mW
藲C
藲C
2.54鹵0.15
1 2 3
0.45
鈥?.1
1.27
+0.2
Symbol
V
CBO
V
CER
I
C
P
C
T
j
T
stg
*
13.5鹵0.5
Low noise figure NF.
High gain.
High transition frequency f
T
.
5.1鹵0.2
s
Features
0.45
鈥?.1
1.27
+0.2
V
EBO
2.3鹵0.2
1:Base
2:Emitter
3:Collector
JEDEC:TO鈥?2
EIAJ:SC鈥?3A
= 1k鈩?/div>
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Transition frequency
Collector output capacitance
Foward transfer gain
Maximum unilateral power gain
Noise figure
(Ta=25藲C)
Symbol
I
CBO
I
EBO
h
FE
f
T*
C
ob*
| S
21e
NF
*
|
2
GUM
*
Conditions
V
CB
= 10V, I
E
= 0
V
EB
= 1V, I
C
= 0
V
CE
= 8V, I
C
= 40mA
V
CE
= 8V, I
C
= 40mA, f = 800MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
V
CE
= 8V, I
C
= 40mA, f = 800MHz
V
CE
= 8V, I
C
= 40mA, f = 800MHz
V
CE
= 8V, I
C
= 40mA, f = 800MHz
V
CE
= 8V, I
C
= 40mA, f
1
= 200MHz
f
2
= 500MHz, V
O
= 100dB碌/75鈩?/div>
V
CE
= 8V, I
C
= 40mA, f
1
= 600MHz
f
2
= 500MHz, V
O
= 100dB碌/75鈩?/div>
50
9
10
50
3.5
150
5.5
0.8
12
13
2.0
60
15
3.2
1.5
min
typ
max
1
1
300
GHz
pF
dB
dB
dB
dB
Unit
碌A(chǔ)
碌A(chǔ)
Second inter modulation distortion IM
2*
Third inter modulation distortion
*
LTPD
IM
3*
75
86
dB
= 10%
1
1
2
