Transistor
2SC2634
Silicon NPN epitaxial planer type
For low-frequency and low-noise amplification
Complementary to 2SA1127
5.1鹵0.2
Unit: mm
5.0鹵0.2
4.0鹵0.2
s
Features
q
q
Low noise voltage NV.
High foward current transfer ratio h
FE
.
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(Ta=25藲C)
Ratings
60
55
7
200
100
400
150
鈥?5 ~ +150
Unit
V
V
V
mA
mA
mW
藲C
藲C
13.5鹵0.5
0.45
鈥?.1
1.27
+0.2
0.45
鈥?.1
1.27
+0.2
1 2 3
2.3鹵0.2
2.54鹵0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO鈥?2
EIAJ:SC鈥?3A
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise voltage
(Ta=25藲C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
V
BE
f
T
NV
Conditions
V
CB
= 10V, I
E
= 0
V
CE
= 10V, I
B
= 0
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CE
= 5V, I
C
= 2mA
I
CE
= 100mA, I
B
= 10mA
V
CE
= 1V, I
C
= 30mA
V
CB
= 5V, I
E
= 鈥?mA, f = 200MHz
V
CE
= 10V, I
C
= 1mA, G
V
= 80dB
R
g
= 100k鈩? Function = FLAT
200
150
60
55
7
180
700
0.6
1
V
V
MHz
mV
min
typ
1
0.01
max
100
1
Unit
nA
碌A(chǔ)
V
V
V
*
h
FE
Rank classification
R
180 ~ 360
S
260 ~ 520
T
360 ~ 700
h
FE
Rank
1
1
2
3
