DATA SHEET
SILICON TRANSISTOR
2SC2351
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
MINI MOLD
FEATURES
鈥?NF
鈥?MAG
1.5 dB
14 dB
TYP.
TYP.
@ f = 1.0 GHz
@ f = 1.0 GHz
PACKAGE DIMENSIONS
(Units: mm)
2.8鹵0.2
0.4
鈭?.05
+0.1
1.5
0.65
鈭?.15
+0.1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
擄C)
0.95
0.95
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
12
3.0
70
250
150
鈭?5
to +150
V
V
mA
mW
擄C
2.9鹵0.2
Collector to Base Voltage
V
CBO
25
V
2
0.3
擄C
1.1 to 1.4
Marking
0.16
鈭?.06
+0.1
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS (T
A
= 25
擄C)
CHARACTERISTIC
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Output Capacitance
Insertion Power Gain
Noise Figure
Maximum Available Gain
SYMBOL
I
CBO
I
EBO
h
FE
f
T
C
ob
錚
21
e錚?/div>
2
NF
MAG
9
40
4.5
0.75
11
1.5
14
3.0
1.0
MIN.
TYP.
MAX.
0.1
0.1
200
GHz
pF
dB
dB
dB
UNIT
TEST CONDITIONS
V
CB
= 15 V, I
E
= 0
V
EB
= 2.0 V, I
C
= 0
V
CE
= 10 V, I
C
= 20 mA
V
CE
= 10 V, I
C
= 20 mA
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
V
CE
= 10 V, I
C
= 5 mA, f = 1.0 GHz
V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
碌
A
碌
A
h
FE
Classification
Class
Marking
h
FE
E/P *
R2
40 to 120
F/Q *
R3
100 to 200
* Old Specification / New Specification
Document No. P10350EJ3V1DS00 (3rd edition)
Date Published March 1997 N
Printed in Japan
0 to 0.1
漏
0.4
鈭?.05
+0.1
1
3
1984
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