Transistor
2SC1980
Silicon NPN epitaxial planer type
For high breakdown voltage low-noise amplification
Complementary to 2SA0921 (2SA921)
5.0鹵0.2
Unit: mm
4.0鹵0.2
G
G
High collector to emitter voltage V
CEO
.
Low noise voltage NV.
I
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(Ta=25藲C)
Ratings
120
120
7
50
20
250
150
鈥?5 ~ +150
Unit
V
V
V
13.5鹵0.5
5.1鹵0.2
I
Features
0.45
鈥?.1
1.27
+0.2
0.45
鈥?.1
1.27
+0.2
1 2 3
2.3鹵0.2
mA
mA
mW
藲C
藲C
2.54鹵0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO鈥?2
EIAJ:SC鈥?3A
I
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Noise voltage
(Ta=25藲C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
NV
Conditions
V
CB
= 50
V
, I
E
= 0
V
CE
= 50V, I
B
= 0
I
C
= 10碌A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10碌A, I
C
= 0
V
CE
= 5V, I
C
= 2mA
I
C
= 20mA, I
B
= 2mA
V
CB
= 5V, I
E
= 鈥?mA, f = 200MHz
V
CE
= 40V, I
C
= 1mA, G
V
= 80dB
R
g
= 100k鈩? Function = FLAT
200
150
120
120
7
180
700
0.6
V
MHz
mV
min
typ
max
0.1
1
Unit
碌A
碌A
V
V
V
*
h
FE
Rank classification
R
180 ~ 360
S
260 ~ 520
T
360 ~ 700
h
FE
Rank
Note.) The Part number in the Parenthesis shows conventional part number.
1
1
2
3
