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2SC1846R Datasheet

  • 2SC1846R

  • TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 1A I(C) | TO-126

  • 4頁(yè)

  • ETC

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Power Transistors
2SC1846
Silicon NPN epitaxial planar type
Unit: mm
For midium output power amplification
Complementary to 2SA0885
(2SA885)
I
Features
鈥?/div>
Low collector to emitter saturation voltage V
CE(sat)
鈥?/div>
Output of 3 W can be obtained by a complementary pair with
2SA0885
鈥?/div>
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
蠁
3.16
鹵0.1
8.0
+0.5
鈥?.1
3.2
鹵0.2
3.8
鹵0.3
11.0
鹵0.5
1.9
鹵0.1
I
Absolute Maximum Ratings
T
C
=
25擄C
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Rating
45
35
5
1.5
1
1.2
*1
5
*2
Junction temperature
Storage temperature
150
鈭?5
to
+150
擄C
擄C
Unit
V
V
V
A
A
W
0.75
鹵0.1
4.6
鹵0.2
0.5
鹵0.1
0.5
鹵0.1
2.3
鹵0.2
3
1.76
鹵0.1
16.0
鹵1.0
1
2
1 : Emitter
2 : Collector
3 : Base
TO-126B Package
Note) *1: Without heat sink
*2: With a 100
脳
100
脳
2 mm A1 heat sink
I
Electrical Characteristics
T
C
=
25擄C
Parameter
Collector cutoff current
Symbol
I
CBO
I
CEO
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
I
EBO
V
CBO
V
CEO
h
FE1 *
h
FE2
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Note) *: Rank classification
Rank
h
FE1
Q
85 to 170
R
120 to 240
S
170 to 340
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 20 V, I
E
= 0
V
CE
= 20 V, I
B
= 0
V
EB
= 5V, I
C
= 0
I
C
= 1 mA, I
E
= 0
I
C
= 2 mA, I
B
= 0
V
CE
= 10 V, I
C
= 500 mA
V
CE
= 5 V, I
C
= 1 A
I
C
= 500 mA, I
B
= 50 mA
V
CB
= 10 V, I
E
=
鈭?0
mA, f = 200 MHz
V
CB
= 10 V, I
E
= 0, f = 1 MHz
200
20
45
35
85
50
0.5
V
MHz
pF
160
340
Min
Typ
Max
0.1
100
10
Unit
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
V
V
Note)The part number in the parenthesis shows conventional part number.
3.05
鹵0.1
1

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