Transistor
2SC1473, 2SC1473A
Silicon NPN triple diffusion planer type
For general amplification
2SC1473 complementary to 2SA1018
2SC1473A complementary to 2SA1767
5.0鹵0.2
Unit: mm
4.0鹵0.2
s
Features
q
q
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SC1473
2SC1473A
2SC1473
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Symbol
V
CBO
(Ta=25藲C)
Ratings
250
300
200
300
7
100
70
750
150
鈥?5 ~ +150
Unit
V
0.45
鈥?.1
1.27
+0.2
13.5鹵0.5
High collector to emitter voltage V
CEO
.
High transition frequency f
T
.
5.1鹵0.2
0.45
鈥?.1
1.27
+0.2
emitter voltage 2SC1473A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
V
mA
mA
mW
藲C
藲C
2.3鹵0.2
1 2 3
2.54鹵0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO鈥?2
EIAJ:SC鈥?3A
s
Electrical Characteristics
Parameter
Collector cutoff
current
Collector to emitter
voltage
2SC1473
2SC1473A
2SC1473
2SC1473A
(Ta=25藲C)
Symbol
I
CEO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
C
ob
Conditions
V
CE
= 120V, I
B
= 0
V
CE
= 120V, I
B
= 0
I
C
= 100碌A, I
C
= 0
I
E
= 1碌A, I
C
= 0
V
CE
= 10V, I
C
= 5mA
I
C
= 50mA, I
B
= 5mA
V
CB
= 10V, I
E
= 鈥?0mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
50
80
10
200
300
7
30
220
1.2
V
MHz
pF
min
typ
max
1
1
Unit
碌A
V
V
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
*
h
FE
Rank classification
P
30 ~ 100
Q
60 ~ 150
R
100 ~ 220
h
FE
Rank
1
1
2
3
4
