Transistor
2SC1360, 2SC1360A
Silicon NPN epitaxial planer type
For intermadiate frequency amplification of TV image
Unit: mm
5.9鹵0.2
4.9鹵0.2
q
q
High transition frequency f
T
.
Large collector power dissipation P
C
.
(Ta=25藲C)
Ratings
50
60
45
60
4
50
1
150
鈥?5 ~ +150
Unit
V
2.54鹵0.15
+0.3
+0.2
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SC1360
2SC1360A
2SC1360
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Symbol
emitter voltage 2SC1360A
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
0.45
鈥?.1
0.45
鈥?.1
1.27
+0.2
V
mA
W
藲C
藲C
1.27
13.5鹵0.5
0.7
鈥?.2
0.7鹵0.1
8.6鹵0.2
s
Features
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
2SC1360
2SC1360A
2SC1360
2SC1360A
(Ta=25藲C)
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
re
PG
Conditions
V
CB
= 20V, I
E
= 0
I
C
= 100碌A(chǔ), I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 100碌A(chǔ), I
C
= 0
V
CB
= 10V, I
E
= 鈥?0mA
I
C
= 20mA, I
B
= 2mA
V
CB
= 10V, I
E
= 鈥?0mA, f = 100MHz
V
CE
= 10V, I
C
= 1mA, f = 10.7MHz
V
CB
= 10V, I
E
= 鈥?0mA, f = 58MHz
22
300
1.5
30
50
60
45
60
4
20
100
0.4
V
MHz
pF
dB
min
typ
max
100
Unit
nA
V
3.2
1
2
3
1:Emitter
2:Collector
3:Base
EIAJ:SC鈥?1
TO鈥?2L Package
V
V
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Common emitter reverse transfer capacitance
Power gain
1
1
2
