Transistor
2SC1215
Silicon NPN epitaxial planer type
For high-frequency (VHF band) amplification and oscillation
Unit: mm
5.0鹵0.2
4.0鹵0.2
s
Features
q
High transition frequency f
T
.
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
(Ta=25藲C)
Ratings
30
20
3
50
400
150
鈥?5 ~ +150
Unit
V
V
V
mA
mW
藲C
藲C
13.5鹵0.5
5.1鹵0.2
0.45
鈥?.1
1.27
+0.2
0.45
鈥?.1
1.27
+0.2
1 2 3
2.3鹵0.2
2.54鹵0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO鈥?2
EIAJ:SC鈥?3A
s
Electrical Characteristics
Parameter
Collector to base voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Common emitter reverse transfer capacitance
Transition frequency
Power gain
Base time constant
(Ta=25藲C)
Symbol
V
CBO
V
EBO
h
FE
V
BE
V
CE(sat)
C
re
f
T*
PG
r
bb
' 路 C
C
Conditions
I
C
=100碌A(chǔ), I
E
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CB
= 10V, I
E
= 鈥?mA
V
CB
= 10V, I
E
= 鈥?mA
I
C
= 10mA, I
B
= 1mA
V
CE
= 10V, I
C
= 1mA, f = 10.7MHz
V
CB
= 10V, I
E
= 鈥?5mA, f = 100MHz
V
CB
= 10V, I
E
= 鈥?mA, f = 100MHz
V
CB
= 10V, I
E
= 鈥?0mA, f = 450kHz
600
min
30
3
25
0.72
0.1
1
1200
20
25
1.5
1600
V
V
pF
MHz
dB
ps
typ
max
Unit
V
V
*
f
T
Rank classification
Rank
T
600 ~ 1300
S
900 ~ 1600
f
T
(MHz)
1
1
2
3
