Power Transistors
2SB967
Silicon PNP epitaxial planar type
Unit: mm
For low-frequency power amplification
7.3鹵0.1
1.8鹵0.1
6.5鹵0.1
5.3鹵0.1
4.35鹵0.1
2.3鹵0.1
0.5鹵0.1
0.8max
q
q
q
Possible to solder the radiation fin directly to printed cicuit board
Low collector to emitter saturation voltage V
CE(sat)
Large collector current I
C
2.5鹵0.1
0.93鹵0.1
1.0鹵0.1
0.1鹵0.05
0.5鹵0.1
0.75鹵0.1
2.3鹵0.1
4.6鹵0.1
s
1
2
3
Absolute Maximum Ratings
(Ta=25藲C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
鈥?7
鈥?8
鈥?
鈥?
鈥?
20
150
鈥?5 to +150
Unit
V
V
V
A
A
W
0.6
2.3
2.3
0.75
6.5鹵0.2
5.35
4.35
1:Base
2:Collector
3:Emitter
U Type Package
Unit: mm
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation (T
C
=25擄C)
Junction temperature
Storage temperature
藲C
藲C
1
2
3
2.3鹵0.1
0.5鹵0.1
1:Base
2:Collector
3:Emitter
EIAJ:SC鈥?3
U Type Package (Z)
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
*
h
(T
C
=25藲C)
Symbol
I
CBO
I
EBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 鈥?0V, I
E
= 0
V
EB
= 鈥?V, I
C
= 0
I
C
= 鈥?mA, I
B
= 0
I
E
= 鈥?0碌A(chǔ), I
C
= 0
V
CE
= 鈥?V, I
C
= 鈥?A
I
C
= 鈥?A, I
B
= 鈥?0.1A
V
CB
= 鈥?V, I
E
= 50mA, f = 200MHz
V
CB
= 鈥?0V, I
E
= 0, f = 1MHz
120
85
鈥?8
鈥?
90
625
鈥?
V
MHz
pF
min
typ
max
鈥?00
鈥?
Unit
nA
碌A(chǔ)
V
V
FE
Rank classification
P
90 to 135
Q
125 to 205
R
180 to 625
Rank
h
FE
6.0
5.5鹵0.2
13.3鹵0.3
Collector to emitter voltage
1.8
Collector to base voltage
1.0鹵0.2
s
Features
1
1
2
