Transistor
2SB0792, 2SB0792A
(2SB792, 2SB792A)
Silicon PNP epitaxial planer type
For high breakdown voltage low-noise amplification
Complementary to 2SD0814 (2SD814)
Unit: mm
I
Features
G
G
G
2.8
鈥?.3
0.65鹵0.15
+0.2
+0.25
1.5
鈥?.05
0.65鹵0.15
1.1
鈥?.1
+0.2
Collector to
base voltage
Collector to
2SB0792
2SB0792A
2SB0792
鈥?85
鈥?50
鈥?85
鈥?
鈥?00
鈥?0
200
150
鈥?5 ~ +150
emitter voltage 2SB0792A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
V
V
mA
mA
mW
藲C
藲C
1:Base
2:Emitter
3:Collector
JEDEC:TO鈥?36
EIAJ:SC鈥?9
Mini Type Package
Marking symbol :
I
(2SB0792)
2F
(2SB0792A)
I
Electrical Characteristics
Parameter
Collector cutoff current
Collector to emitter
voltage
2SB0792
2SB0792A
(Ta=25藲C)
Symbol
I
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
C
ob
NV
Conditions
V
CB
= 鈥?00V, I
E
= 0
I
C
= 鈥?00碌A, I
B
= 0
I
E
= 鈥?0碌A, I
C
= 0
V
CE
= 鈥?V, I
C
= 鈥?0mA
I
C
= 鈥?0碌A, I
B
= 鈥?mA
V
CB
= 鈥?0V, I
E
= 10mA, f = 200MHz
V
CB
= 鈥?0V, I
E
= 0, f = 1MHz
V
CE
= 鈥?0V, I
C
= 鈥?mA, G
V
= 80dB,
R
g
= 100k鈩? Function = FLAT
200
4
150
鈥?50
鈥?85
鈥?
130
130
450
330
鈥?
V
MHz
pF
mV
min
typ
max
鈥?
Unit
碌A
V
V
Emitter to base voltage
Forward current
transfer ratio
2SB0792
2SB0792A
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Noise voltage
*
h
FE
Rank classification
Rank
h
FE
R
130 ~ 220
2SB0792
2SB0792A
IR
2FR
S
185 ~ 330
IS
2FS
T
260 ~ 450
IT
鈥?/div>
Note.) The Part numbers in the Parenthesis show
conventional part number.
Marking
Symbol
0 to 0.1
V
CBO
鈥?50
V
0.1 to 0.3
0.4鹵0.2
0.8
Parameter
Symbol
Ratings
Unit
0.16
鈥?.06
+0.1
I
Absolute Maximum Ratings
(Ta=25藲C)
2
0.4
鈥?.05
High collector to emitter voltage V
CEO
.
Low noise voltage NV.
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
0.95
2.9
鈥?.05
1
1.9鹵0.2
+0.2
0.95
3
+0.1
1.45
1
1
2
3
