Transistor
2SB0790
(2SB790)
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SD0969 (2SD969)
6.9鹵0.1
2.5鹵0.1
1.0
1.0
2.4鹵0.2 2.0鹵0.2 3.5鹵0.1
Unit: mm
I
Features
G
G
1.5
0.4
1.5 R0.9
R0.9
Low collector to emitter saturation voltage V
CE(sat)
.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
1.0鹵0.1
R
0.
7
0.85
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
鈥?5
鈥?0
鈥?
鈥?
鈥?0.5
600
150
鈥?5 ~ +150
Unit
V
V
V
A
A
mW
藲C
藲C
1:Base
2:Collector
3:Emitter
2.5
2.5
3
2
1
EIAJ:SC鈥?1
M Type Mold Package
I
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25藲C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 鈥?5V, I
E
= 0
V
CE
= 鈥?0V, I
B
= 0
I
C
= 鈥?0碌A(chǔ), I
E
= 0
I
C
= 鈥?mA, I
B
= 0
I
C
= 鈥?0碌A(chǔ), I
C
= 0
V
CE
= 鈥?V, I
C
= 鈥?.5A
*2
V
CE
= 鈥?V, I
C
= 鈥?A
*2
I
C
= 鈥?00mA, I
B
= 鈥?0mA
*2
I
C
= 鈥?00mA, I
B
= 鈥?0mA
*2
V
CB
= 鈥?0V, I
E
= 50mA, f = 200MHz
V
CB
= 鈥?0V, I
E
= 0, f = 1MHz
150
15
*2
min
typ
1.25鹵0.05
I
Absolute Maximum Ratings
(Ta=25藲C)
0.55鹵0.1
0.45鹵0.05
max
鈥?00
鈥?
鈥?5
鈥?0
鈥?
90
25
鈥?0.4
鈥?.2
220
4.1鹵0.2
4.5鹵0.1
Unit
nA
碌A(chǔ)
V
V
V
V
V
MHz
25
pF
Pulse measurement
*1
h
FE1
Rank classification
Q
90 ~ 155
R
130 ~ 220
Rank
h
FE1
Note.) The Part number in the Parenthesis shows conventional part number.
1
1
2
3
