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2SB710A Datasheet

  • 2SB710A

  • Silicon PNP epitaxial planar type

  • 3頁

  • PANASONIC

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Transistors
2SB0710
(2SB710)
, 2SB0710A
(2SB710A)
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SD0602 (2SD602), 2SD0602A (2SD602A)
鈻?/div>
Features
鈥?/div>
Large collector current I
C
鈥?/div>
Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing and the magazine packing
0.40
+0.10
鈥?.05
3
1.50
+0.25
鈥?.05
2.8
+0.2
鈥?.3
Unit: mm
0.16
+0.10
鈥?.06
1
2
(0.65)
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Collector-base voltage
(Emitter open)
2SB0710
2SB0710A
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Symbol
V
CBO
Rating
鈭?0
鈭?0
鈭?5
鈭?0
鈭?
鈭?/div>
0.5
鈭?
200
150
鈭?5
to
+150
V
A
A
mW
擄C
擄C
V
Unit
V
10藲
(0.95) (0.95)
1.9
鹵0.1
2.90
+0.20
鈥?.05
1.1
+0.2
鈥?.1
Collector-emitter voltage 2SB0710
(Base open)
2SB0710A
1.1
+0.3
鈥?.1
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Marking Symbol:
鈥?/div>
2SB0710: C
鈥?/div>
2SB0710A: D
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
2SB0710
2SB0710A
2SB0710
2SB0710A
V
EBO
I
CBO
h
FE1 *2
h
FE2
Collector-emitter saturation voltage
*1
Base-emitter saturation voltage
*1
Transition frequency
Collector output capacitance
(Common base, input open circuited)
V
CE(sat)
V
BE(sat)
f
T
C
ob
I
E
= 鈭?0 碌A(chǔ),
I
C
=
0
V
CB
= 鈭?0
V, I
E
=
0
V
CE
= 鈭?0
V, I
C
= 鈭?50
mA
V
CE
= 鈭?0
V, I
C
= 鈭?00
mA
I
C
= 鈭?00
mA, I
B
= 鈭?0
mA
I
C
= 鈭?00
mA, I
B
= 鈭?0
mA
V
CB
= 鈭?0
V, I
E
=
50 mA, f
=
200 MHz
V
CB
= 鈭?0
V, I
E
=
0, f
=
1 MHz
85
40
鈭?/div>
0.35
鈭?/div>
0.60
鈭?.1
200
6
15
鈭?.5
V
CEO
I
C
= 鈭?0
mA, I
B
=
0
Symbol
V
CBO
Conditions
I
C
= 鈭?0 碌A(chǔ),
I
E
=
0
Min
鈭?0
鈭?0
鈭?5
鈭?0
鈭?
鈭?/div>
0.1
340
V
碌A(chǔ)
錚?/div>
錚?/div>
V
V
MHz
pF
V
Typ
Max
Unit
V
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
h
FE1
Marking
symbol
2SB0710
2SB0710A
Q
85 to 170
CQ
DQ
R
120 to 240
CR
DR
S
170 to 340
CS
DS
No-rank
85 to 340
C
D
Product of no-rank is not
classified and have no
marking symbol for rank.
Note) The part numbers in the parenthesis show conventional part number.
Publication date: May 2003
SJC00048CED
0 to 0.1
0.4
鹵0.2
5藲
1

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