Transistor
2SB0621, 2SB0621A
(2SB621, 2SB621A)
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SD0592 (2SD592) and 2SD0592A (2SD592A)
5.0鹵0.2
Unit: mm
4.0鹵0.2
G
G
Low collector to emitter saturation voltage V
CE(sat)
.
High transition frequency f
T
.
(Ta=25藲C)
Ratings
鈥?0
鈥?0
鈥?5
鈥?0
鈥?
鈥?.5
鈥?
750
150
鈥?5 ~ +150
Unit
V
I
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SB0621
2SB0621A
2SB0621
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
13.5鹵0.5
5.1鹵0.2
I
Features
0.45
鈥?.1
+0.2
0.45
鈥?.1
1.27
+0.2
emitter voltage 2SB0621A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
V
A
A
mW
藲C
藲C
1.27
1 2 3
2.3鹵0.2
2.54鹵0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO鈥?2
EIAJ:SC鈥?3A
I
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
2SB0621
2SB0621A
2SB0621
2SB0621A
(Ta=25藲C)
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 鈥?0V, I
E
= 0
I
C
= 鈥?0碌A, I
E
= 0
I
C
= 鈥?mA, I
B
= 0
I
E
= 鈥?0碌A, I
C
= 0
V
CE
= 鈥?0V, I
C
= 鈥?00mA
V
CE
= 鈥?V, I
C
= 鈥?A
I
C
= 鈥?00mA, I
B
= 鈥?0mA
IC = 鈥?00mA, I
B
= 鈥?0mA
V
CB
= 鈥?0V, I
E
= 50mA, f = 200MHz
V
CB
= 鈥?0V, I
E
= 0, f = 1MHz
鈥?0
鈥?0
鈥?5
鈥?0
鈥?
85
50
鈥?0.2
鈥?0.85
200
20
30
鈥?.4
鈥?.2
V
V
MHz
pF
340
min
typ
max
鈥?0.1
Unit
碌A
V
V
V
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
*
h
FE1
Rank classification
Q
85 ~ 170
R
120 ~ 240
S
170 ~ 340
Rank
h
FE1
Note.) The Part numbers in the Parenthesis show conventional part number.
1
1
2
3
4
