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2SB601 Datasheet

  • 2SB601

  • PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR...

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  • NEC   NEC

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DATA SHEET
SILICON POWER TRANSISTOR
2SB601
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
FEATURES
鈥?High-DC current gain due to Darlington connection
鈥?Low collector saturation voltage
鈥?Low collector cutoff current
鈥?Ideal for use in direct drive from IC output for magnet drivers such
as treminal equipment or cash registers
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25擄C)
擄
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector current
Base current
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
I
B(DC)
P
T
(Ta = 25擄C)
P
T
(Tc = 25擄C)
T
j
T
stg
Ratings
鈭?00
鈭?00
鈭?.0
鈥?/div>
+5.0
鈥?/div>
+8.0
鈭?.5
1.5
30
150
鈭?5
to +150
Unit
V
V
V
A
A
A
W
W
擄C
擄C
(/(&752'(
&211(&7,21
* PW
鈮?/div>
10 ms, duty cycle
鈮?/div>
50%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16131EJ3V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
漏
2002
1998

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