DATA SHEET
SILICON TRANSISTOR
2SB1628
PNP SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
The 2SB1628 features high current capacity in small dimension
and is ideal for DC/DC converters and mortor drivers.
PACKAGE DRAWING (UNIT: mm)
FEATURES
鈥?High current capacitance
鈥?Low collector saturation voltage
QUALITY GRADES
鈥?Standard
Please refer to 鈥淨uality Grades on NEC Semiconductor Devices鈥?/div>
(Document No. C11531E) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
Electrode connection
1: Emitter
2: Collector (fin)
3: Base
ABSOLUTE MAXIMUM RATINGS (Ta = 25擄C)
擄
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
PW
鈮?/div>
10 ms
Duty cycle
鈮?/div>
50 %
Conditions
Ratings
鈭?0
鈭?6
鈭?.0
鈭?.0
鈭?.0
鈭?.2
PW
鈮?/div>
10 ms
Duty cycle
鈮?/div>
50 %
16 cm
2
脳
0.7 mm ceramic board used
鈭?.4
Unit
V
V
V
A
A
Base current (DC)
Base current (pulse)
I
B(DC)
I
B(pulse)
A
A
Total power dissipation
Junction temperature
Storage temperature
P
T
T
j
T
stg
2.0
150
鈭?5
to +150
W
擄C
擄C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16148EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
漏
2002
1998
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