Transistor
2SB1592
Silicon PNP epitaxial planer type
For low-frequency amplification
Unit: mm
5.0鹵0.2
4.0鹵0.2
q
q
Low collector to emitter saturation voltage V
CE(sat)
.
Allowing supply with the radial taping.
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
Applied
(Ta=25藲C)
Ratings
鈥?0
鈥?5
鈥?1
鈥?0
鈥?
1
150
鈥?5 ~ +150
Unit
V
V
V
A
A
W
藲C
藲C
1 2 3
2.54鹵0.15
1.27
0.45
鈥?.1
1.27
+0.15
Symbol
V
CBO
V
CEO
V
EBO
I
CP*
I
C
P
C
T
j
T
stg
13.5鹵0.5
0.7鹵0.1
0.7鹵0.2
8.0鹵0.2
s
Features
0.45
鈥?.1
+0.15
2.3鹵0.2
1:Emitter
2:Collector
3:Base
TO鈥?2NL Package
are shot pulse of
鈮?ms
width
s
Electrical Characteristics
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25藲C)
Symbol
V
CBO
V
CEO
V
EBO
h
FE*1
V
CE(sat)
f
T
C
ob
Conditions
I
C
= 鈥?0碌A, I
E
= 0
I
C
= 鈥?mA, I
B
= 0
I
E
= 鈥?0碌A, I
C
= 0
V
CE
= 鈥?V, I
C
= 鈥?.4A
*2
I
C
= 鈥?.4A, I
B
= 鈥?5mA
*2
V
CB
= 鈥?V, I
E
= 50mA, f = 200MHz
V
CB
= 鈥?0V, I
E
= 0, f = 1MHz
*2
min
鈥?0
鈥?5
鈥?1
90
typ
max
Unit
V
V
V
450
鈥?0.16
150
85
鈥?0.22
V
MHz
pF
Pulse measurement
*1
h
FE
Rank classification
Q
90 ~ 180
R
130 ~ 450
Rank
h
FE
1
1
2
3
