Power Transistors
2SB1574 (Tentative)
Silicon PNP epitaxial planar type
Unit: mm
For low-frequency output amplification
7.3鹵0.1
1.8鹵0.1
6.5鹵0.1
5.3鹵0.1
4.35鹵0.1
2.3鹵0.1
0.5鹵0.1
0.8max
q
q
q
q
Possible to solder radiation fin directly to printed cicuit boad
Type with universal characteristics
Collector breakdown voltage: V
CBO
/V
CEO
= 鈥?0V
Collector current: I
C
= 鈥?A
2.5鹵0.1
0.93鹵0.1
1.0鹵0.1
0.1鹵0.05
0.5鹵0.1
0.75鹵0.1
2.3鹵0.1
4.6鹵0.1
1
2
3
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation (T
C
=25擄C)
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
1:Base
2:Collector
3:Emitter
U Type Package
Unit: mm
(T
C
=25藲C)
Ratings
鈥?0
鈥?0
鈥?
鈥?
鈥?
10
150
鈥?5 to +150
Unit
V
V
V
A
A
W
藲C
藲C
1
6.5鹵0.2
5.35
4.35
1.8
0.75
2.3
2.3
0.6
0.5鹵0.1
2.3鹵0.1
2
3
1:Base
2:Collector
3:Emitter
EIAJ:SC鈥?3
U Type Package (Z)
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
(T
C
=25藲C)
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 鈥?0V, I
E
= 0
I
C
= 鈥?0碌A(chǔ), I
E
= 0
I
C
= 鈥?mA, I
B
= 0
I
E
= 鈥?0碌A(chǔ), I
C
= 0
V
CE
= 鈥?V, I
C
= 鈥?00mA
V
CE
= 鈥?V, I
C
= 鈥?A
I
C
= 鈥?A, I
B
= 鈥?0mA
I
C
= 鈥?A, I
B
= 鈥?0mA
V
CB
= 鈥?0V, I
E
= 50mA, f = 200MHz
V
CB
= 鈥?0V, I
E
= 0, f = 1MHz
鈥?0
鈥?0
鈥?
120
60
鈥?0.2
鈥?0.85
80
45
60
鈥?0.3
鈥?.2
V
V
MHz
pF
340
min
typ
max
鈥?0.1
Unit
碌A(chǔ)
V
V
V
*
h
FE1
Rank classification
R
120 to 240
S
170 to 340
Rank
h
FE1
6.0
5.5鹵0.2
13.3鹵0.3
1.0鹵0.2
s
Features
1
1
