Power Transistors
2SB1554
Silicon PNP epitaxial planar type
For power amplification
Unit: mm
s
q
q
5.0鹵0.1
Features
13.0鹵0.2
4.2鹵0.2
10.0鹵0.2
1.0
High forward current transfer ratio h
FE
which has satisfactory linearity
Allowing automatic insertion with radial taping
(T
C
=25藲C)
90擄
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
2.5鹵0.2
1.2鹵0.1
C1.0
2.25鹵0.2
18.0鹵0.5
Solder Dip
Ratings
鈥?0
鈥?0
鈥?0
鈥?
鈥?
鈥?
15
2
150
鈥?5 to +150
Unit
V
V
V
A
A
A
W
藲C
藲C
0.35鹵0.1
0.65鹵0.1
1.05鹵0.1
0.55鹵0.1
0.55鹵0.1
C1.0
1 2 3
2.5鹵0.2
2.5鹵0.2
1:Base
2:Collector
3:Emitter
MT4 Type Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
(T
C
=25藲C)
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 鈥?0V, I
E
= 0
V
CE
= 鈥?0V, I
B
= 0
V
EB
= 鈥?5V, I
C
= 0
I
C
= 鈥?0mA, I
B
= 0
V
CE
= 鈥?V, I
C
= 鈥?0.8A
V
CE
= 鈥?V, I
C
= 鈥?A
I
C
= 鈥?A, I
B
= 鈥?00mA
I
C
= 鈥?A, I
B
= 鈥?00mA
V
CE
= 鈥?0V, I
C
= 鈥?0.5A, f = 1MHz
I
C
= 鈥?A,
I
B1
= 鈥?00mA, I
B2
= 100mA,
V
CC
= 鈥?0V
25
0.4
0.6
0.25
鈥?0
80
30
鈥?.0
鈥?.5
V
V
MHz
碌s
碌s
碌s
400
min
typ
max
鈥?0
鈥?0
鈥?0
Unit
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
V
FE1
Rank classification
Q
80 to 160
P
120 to 240
O
200 to 400
Rank
h
FE1
1
1
2
3
4
