Transistor
2SB1488
Silicon PNP triple diffusion planer type
Unit: mm
For power switching
0.15
6.9鹵0.1
0.7
4.0
1.05 2.5鹵0.1
鹵0.05
(1.45)
0.8
0.5
4.5鹵0.1
s
Features
q
q
q
q
High foward current transfer ratio h
FE
.
High-speed switching.
High collector to base voltage V
CBO
.
Allowing supply with the radial taping.
(Ta=25藲C)
Ratings
鈥?00
鈥?00
鈥?
鈥?
鈥?0.5
1
150
鈥?5 ~ +150
Unit
V
V
V
A
A
W
藲C
0.65 max.
1.0 1.0
0.2
0.45
鈥?.05
0.45
鈥?.05
+0.1
+0.1
2.5鹵0.5
2.5鹵0.5
2
3
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT2 Type Package
1.2鹵0.1
藲C
0.45
+0.1
鈥?0.05
0.65
max.
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
2.5鹵0.1
(HW type)
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Collector current fall time
Collector output capacitance
*1
h
FE1
Rank classification
(Ta=25藲C)
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
C
ob
Conditions
V
CB
= 鈥?00V, I
E
= 0
V
CE
= 鈥?00V, I
B
= 0
V
BE
= 鈥?V, I
C
= 0
I
C
= 鈥?mA, I
B
= 0
V
CE
= 鈥?V, I
C
= 鈥?0mA
V
CE
= 鈥?V, I
C
= 鈥?00mA
*2
I
C
= 鈥?00mA, I
B
= 鈥?0mA
*2
I
C
= 鈥?00mA, I
B
= 鈥?0mA
*2
V
CB
= 鈥?0V, I
E
= 0.1A, f = 1MHz
*2
I
C
= 鈥?00mA, R
L
= 1.5k鈩?/div>
I
B1
= 鈥?0mA, I
B2
= 10mA
V
CC
= 鈥?50V
V
CB
= 鈥?0V, I
E
= 0, f = 1MHz
鈥?00
80
10
鈥?0.25
鈥?0.8
25
0.4
5.5
0.5
20
*2
min
typ
max
鈥?
鈥?
鈥?
14.5鹵0.5
Unit
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
V
280
鈥?0.5
鈥?.2
V
V
MHz
碌s
碌s
碌s
pF
1.0
6.5
1.0
40
Pulse measurement
Rank
h
FE1
P
80 ~ 160
Q
130 ~ 280
1
1
2
3
