2SB1386 / 2SB1412 / 2SB1326
Transistors
Low frequency transistor (鈭?0V,
鈭?A)
2SB1386 / 2SB1412 / 2SB1326
!
Features
1) Low V
CE(sat)
.
V
CE(sat)
=
鈭?.35V
(Typ.)
(I
C
/I
B
=
鈭?A
/
鈭?.1A)
2) Excellent DC current gain
characteristics.
3) Complements the 2SD2098 /
2SD2118 / 2SD2097.
!
External dimensions
(Units : mm)
2SB1386
0.5鹵0.1
4.5
+0.2
鈭?.1
1.6鹵0.1
1.5
+0.2
鈭?.1
2SB1412
1.5
鹵
0.3
6.5
鹵
0.2
5.1
+0.2
鈭?.1
C0.5
2.3
+
0.2
鈭?/div>
0.1
0.5
鹵
0.1
5.5
+
0.3
鈭?/div>
0.1
(1)
(2)
(3)
0.4鹵0.1
1.5鹵0.1
1.0鹵0.2
0.4
+0.1
鈭?.05
0.75
0.9
0.65
鹵
0.1
0.4鹵0.1
1.5鹵0.1
0.5鹵0.1
3.0鹵0.2
0.55
鹵
0.1
2.3
鹵
0.2 2.3
鹵
0.2
1.0
鹵
0.2
!
Structure
Epitaxial planar type
PNP silicon transistor
ROHM : MPT3
EIAJ : SC-62
(1) Base
(2) Collector
(3) Emitter
(1) (2) (3)
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
Abbreviated symbol: BH鈭?/div>
2SB1326
6.8鹵0.2
2.5鹵0.2
0.65Max.
1.0
0.5鹵0.1
(1)
(2)
(3)
2.54 2.54
1.05
0.45鹵0.1
ROHM :
ATV
鈭?/div>
Denotes h
FE
14.5鹵0.5
4.4鹵0.2
0.9
(1) Emitter
(2) Collector
(3) Base
2.5
9.5
鹵
0.5
4.0
鹵0.3
2.5
+0.2
鈭?.1
0.9
1.5
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