Transistor
2SB1378
Silicon PNP epitaxial planer type
For low-frequency power amplification
Complementary to 2SD1996
6.9鹵0.1
Unit: mm
1.05 2.5鹵0.1
(1.45)
鹵0.05
0.8
q
q
q
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(Ta=25藲C)
Ratings
鈥?5
鈥?0
鈥?
鈥?
鈥?0.5
600
150
鈥?5 ~ +150
Unit
V
V
V
A
A
mW
藲C
藲C
0.45
鈥?.05
+0.1
1
2
3
0.45
鈥?.05
2.5鹵0.5
2.5鹵0.5
+0.1
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT1 Type Package
1.2鹵0.1
0.65
max.
0.45
+0.1
鈥?0.05
2.5鹵0.1
(HW type)
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
*1
h
(Ta=25藲C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 鈥?5V, I
E
= 0
V
CE
= 鈥?0V, I
B
= 0
I
C
= 鈥?0碌A(chǔ), I
E
= 0
I
C
= 鈥?mA, I
B
= 0
I
E
= 鈥?0碌A(chǔ), I
C
= 0
V
CE
= 鈥?V, I
C
= 鈥?.5A
*2
V
CE
= 鈥?V, I
C
= 鈥?A
*2
I
C
= 鈥?00mA, I
B
= 鈥?0mA
*2
I
C
= 鈥?00mA, I
B
= 鈥?0mA
*2
V
CB
= 鈥?0V, I
E
= 50mA, f = 200MHz
V
CB
= 鈥?0V, I
E
= 0, f = 1MHz
150
15
*2
min
typ
max
鈥?00
鈥?
14.5鹵0.5
0.85
Low collector to emitter saturation voltage V
CE(sat)
.
Optimum for low-voltage operation and for converters.
Allowing supply with the radial taping.
0.65 max.
1.0
3.5鹵0.1
s
Features
0.15
0.7
4.0
0.8
Unit
nA
碌A(chǔ)
V
V
V
鈥?5
鈥?0
鈥?
90
25
鈥?0.4
鈥?.2
350
V
V
MHz
25
pF
Pulse measurement
FE1
Rank classification
Q
90 ~ 155
R
130 ~ 220
S
180 ~ 350
Rank
h
FE1
1
1
2
3
