Transistor
2SB1297
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SD1937
5.0鹵0.2
4.0鹵0.2
Unit: mm
q
q
q
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(Ta=25藲C)
Ratings
鈥?20
鈥?20
鈥?
鈥?
鈥?0.5
1
150
鈥?5 ~ +150
Unit
V
V
V
A
A
W
藲C
藲C
1 2 3
2.54鹵0.15
1.27
0.45
鈥?.1
1.27
+0.15
13.5鹵0.5
Extremely satisfactory linearity of the forward current transfer
ratio h
FE
.
High transition frequency f
T
.
Makes up a complementary pair with 2SD1937, which is opti-
mum for the pre-driver stage of a 40 to 60W output amplifier.
0.7鹵0.1
0.7鹵0.2
8.0鹵0.2
s
Features
0.45
鈥?.1
+0.15
2.3鹵0.2
1:Emitter
2:Collector
3:Base
TO鈥?2NL Package
s
Electrical Characteristics
Parameter
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25藲C)
Symbol
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
I
C
= 鈥?.1mA, I
B
= 0
I
E
= 鈥?0碌A(chǔ), I
C
= 0
V
CE
= 鈥?0V, I
C
= 鈥?50mA
*2
V
CE
= 鈥?V, I
C
= 鈥?00mA
*2
I
C
= 鈥?00mA, I
B
= 鈥?0mA
*2
I
C
= 鈥?00mA, I
B
= 鈥?0mA
*2
V
CB
= 鈥?0V, I
E
= 50mA, f = 200MHz
V
CB
= 鈥?0V, I
E
= 0, f = 1MHz
*2
min
鈥?20
鈥?
90
50
typ
max
Unit
V
V
220
鈥?.0
鈥?.2
250
30
V
V
MHz
pF
Pulse measurement
*1
h
FE1
Rank classification
Q
90 ~ 155
R
130 ~ 220
Rank
h
FE1
1
1
2
3
