Transistor
2SB1288
Silicon PNP epitaxial planer type
For low-frequency power amplification
For DC-DC converter
5.0鹵0.2
4.0鹵0.2
Unit: mm
For stroboscope
s
Features
q
q
q
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(Ta=25藲C)
Ratings
鈥?0
鈥?0
鈥?
鈥?0
鈥?
1
150
鈥?5 ~ +150
Unit
V
V
V
A
A
W
藲C
藲C
1 2 3
2.54鹵0.15
1.27
0.45
鈥?.1
1.27
+0.15
13.5鹵0.5
Low collector to emitter saturation voltage V
CE(sat)
.
Large collector current I
C
.
Allowing supply with the radial taping.
0.7鹵0.1
0.7鹵0.2
8.0鹵0.2
0.45
鈥?.1
+0.15
2.3鹵0.2
1:Emitter
2:Collector
3:Base
TO鈥?2NL Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25藲C)
Symbol
I
CBO
I
EBO
V
CEO
V
EBO
h
FE*1
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 鈥?0V, I
E
= 0
V
EB
= 鈥?V, I
C
= 0
I
C
= 鈥?mA, I
B
= 0
I
E
= 鈥?0碌A(chǔ), I
C
= 0
V
CE
= 鈥?V, I
C
= 鈥?A
*2
I
C
= 鈥?A, I
B
= 鈥?.1A
*2
V
CB
= 鈥?V, I
E
= 50mA, f = 200MHz
V
CB
= 鈥?0V, I
E
= 0, f = 1MHz
*2
min
typ
max
鈥?00
鈥?00
Unit
nA
nA
V
V
鈥?0
鈥?
90
625
鈥?
120
85
V
MHz
pF
Pulse measurement
*1
h
FE
Rank classification
P
90 ~ 135
Q
120 ~ 205
R
180 ~ 625
Rank
h
FE
1
1
2
3
