Transistor
2SB1220
Silicon PNP epitaxial planer type
For high breakdown voltage low-noise amplification
Complementary to 2SD1821
2.1鹵0.1
Unit: mm
q
q
q
High collector to emitter voltage V
CEO
.
Low noise voltage NV.
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
0.425
1.25鹵0.1
0.425
0.65
1
2.0鹵0.2
1.3鹵0.1
0.65
3
2
0.9鹵0.1
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
鈥?50
鈥?50
鈥?
鈥?00
鈥?0
150
150
鈥?5 ~ +150
V
V
V
mA
mA
mW
藲C
藲C
0.7鹵0.1
0 to 0.1
0.2鹵0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC鈥?0
S-Mini Type Package
Marking symbol :
I
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Noise voltage
(Ta=25藲C)
Symbol
I
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
C
ob
NV
Conditions
V
CB
= 鈥?00V, I
E
= 0
I
C
= 鈥?00碌A(chǔ), I
B
= 0
I
E
= 鈥?0碌A(chǔ), I
C
= 0
V
CE
= 鈥?V, I
C
= 鈥?0mA
I
C
= 鈥?0mA, I
B
= 鈥?mA
V
CB
= 鈥?0V, I
E
= 10mA, f = 200MHz
V
CB
= 鈥?0V, I
E
= 0, f = 1MHz
V
CE
= 鈥?0V, I
C
= 鈥?mA, G
V
= 80dB,
R
g
= 100k鈩? Function = FLAT
200
4
150
鈥?50
鈥?
130
450
鈥?
V
MHz
pF
mV
min
typ
max
鈥?
Unit
碌A(chǔ)
V
V
*
h
FE
Rank classification
Rank
h
FE
Marking Symbol
R
130 ~ 220
IR
S
185 ~ 330
IS
T
260 ~ 450
IT
0.15
鈥?.05
+0.1
Parameter
Symbol
Ratings
Unit
0.2
s
Absolute Maximum Ratings
(Ta=25藲C)
0.3
鈥?
+0.1
1
1
2
