Transistor
2SB1207
Silicon PNP epitaxial planer type
For low-voltage output amplification
Unit: mm
4.0鹵0.2
3.0鹵0.2
0.7鹵0.1
s
Features
q
q
q
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
鈥?5
鈥?0
鈥?
鈥?
鈥?0.5
300
150
鈥?5 ~ +150
Unit
V
V
1
2
3
1.27 1.27
V
A
A
mW
藲C
藲C
1:Emitter
2:Collector
3:Base
2.54鹵0.15
EIAJ:SC鈥?2
New S Type Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25藲C)
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 鈥?0V, I
E
= 0
I
C
= 鈥?0碌A, I
E
= 0
I
C
= 鈥?mA, I
B
= 0
I
E
= 鈥?0碌A, I
C
= 0
V
CE
= 鈥?V, I
C
= 鈥?.5A
*2
V
CE
= 鈥?V, I
C
= 鈥?A
*2
I
C
= 鈥?.4A, I
B
= 鈥?mA
I
C
= 鈥?.4A, I
B
= 鈥?mA
V
CB
= 鈥?0V, I
E
= 50mA, f = 200MHz
V
CB
= 鈥?0V, I
E
= 0, f = 1MHz
鈥?5
鈥?0
鈥?
130
60
鈥?0.16
鈥?0.8
130
22
*2
min
typ
max
鈥?00
2.0鹵0.2
marking
+0.2
0.45鈥?.1
s
Absolute Maximum Ratings
(Ta=25藲C)
15.6鹵0.5
Low collector to emitter saturation voltage V
CE(sat)
.
Optimum for high-density mounting.
Allowing supply with the radial taping.
Unit
nA
V
V
V
350
鈥?0.3
鈥?.2
V
V
MHz
pF
Pulse measurement
*1
h
FE1
Rank classification
R
130 ~ 220
S
180 ~ 350
Rank
h
FE1
1
1
2
