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2SB1180A Datasheet

  • 2SB1180A

  • Silicon PNP epitaxial planar type darlington

  • 4頁(yè)

  • PANASONIC

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Power Transistors
2SB1180, 2SB1180A
Silicon PNP epitaxial planar type darlington
Unit: mm
For medium-speed voltage switching
Complementary to 2SD1750, 2SD1750A
鈻?/div>
Features
鈥?/div>
High forward current transfer ratio h
FE
鈥?/div>
I type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
12.6
鹵0.3
7.2
鹵0.3
7.0
鹵0.3
3.0
鹵0.2
2.0
鹵0.2
3.5
鹵0.2
0藲 to 0.15藲
2.5
鹵0.2
(1.0)
(1.0)
1.1
鹵0.1
1.0
鹵0.2
鈻?/div>
Absolute Maximum Ratings
T
C
=
25擄C
Parameter
Collector-base voltage
(Emitter open)
2SB1180
2SB1180A
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
T
a
=
25擄C
Junction temperature
Storage temperature
Symbol
V
CBO
Rating
鈭?0
鈭?0
鈭?0
鈭?0
鈭?
鈭?
鈭?2
15
1.3
150
鈭?5
to
+150
擄C
擄C
V
A
A
W
V
Unit
V
0.75
鹵0.1
0.4
鹵0.1
2.3
鹵0.2
4.6
鹵0.4
1
2
3
0.9
鹵0.1
0藲 to 0.15藲
Collector-emitter voltage 2SB1180
(Base open)
2SB1180A
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
1: Base
2: Collector
3: Emitter
I-G1 Package
Note) Self-supported type package is also prepared.
Internal Connection
C
B
鈻?/div>
Electrical Characteristics
T
C
=
25擄C
鹵
3擄C
Parameter
Collector-emitter voltage
(Base open)
Collector-base cutoff
current (Emitter open)
2SB1180
2SB1180A
2SB1180
2SB1180A
I
EBO
h
FE1 *
h
FE2
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
I
CBO
V
CB
= 鈭?0
V, I
E
=
0
V
CB
= 鈭?0
V, I
E
=
0
V
EB
= 鈭?
V, I
C
=
0
V
CE
= 鈭?
V, I
C
= 鈭?
A
V
CE
= 鈭?
V, I
C
= 鈭?
A
I
C
= 鈭?
A, I
B
= 鈭?
mA
I
C
= 鈭?
A, I
B
= 鈭?
mA
V
CE
= 鈭?
V, I
C
= 鈭?
A, f
=
1 MHz
I
C
= 鈭?
A, I
B1
= 鈭?
mA, I
B2
=
8 mA
V
CC
= 鈭?0
V
20
0.5
2.0
1.0
2 000
500
Symbol
V
CEO
Conditions
I
C
= 鈭?0
mA, I
B
=
0
Min
鈭?0
鈭?0
Typ
E
Max
Unit
V
鈭?00
鈭?00
鈭?
10 000
鈭?.5
鈭?
mA
錚?/div>
V
V
MHz
碌s
碌s
碌s
碌A(chǔ)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE1
Q
P
2 000 to 5 000 4 000 to 10 000
2.5
鹵0.2
Publication date: March 2003
SJD00056AED
1

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