DATA SHEET
SILICON TRANSISTORS
2SB1116, 1116A
PNP SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
FEATURES
鈥?Low V
CE(sat)
V
CE(sat)
=
鈭?.20
V TYP. (I
C
=
鈭?.0
A, I
B
=
鈭?0
mA)
鈥?High P
T
in small dimension with general-purpose
P
T
= 0.75 W, V
CEO
=
鈭?0/鈭?0
V, I
C(DC)
=
鈭?.0
A
鈥?Complementary transistor with 2SD1616 and 1616A
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25擄C)
擄
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
P
T
T
j
T
stg
Ratings
2SB1116 2SB1116A
鈭?0
鈭?0
鈭?0
鈭?.0
鈭?.0
鈭?.0
0.75
150
鈭?5
to +150
鈭?0
Unit
V
V
V
A
A
W
擄C
擄C
* PW
鈮?/div>
10 ms, duty cycle
鈮?/div>
50%
ELECTRICAL CHARACTERISTICS (Ta = 25擄C)
擄
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
DC base voltage
Collector saturation voltage
Base saturation voltage
Output capacitance
Gain bandwidth product
Turn-on time
Storage temperature
Fall time
Symbol
I
CBO
I
EBO
h
FE1
**
h
FE2
**
V
BE
**
V
CE(sat)
**
V
BE(sat)
**
C
ob
f
T
t
on
t
stg
t
f
Conditions
V
CB
=
鈭?0
V, I
E
= 0
V
EB
=
鈭?.0
V, I
C
= 0
V
CE
=
鈭?.0
V, I
C
=
鈭?00
mA
V
CE
=
鈭?.0
V, I
C
=
鈭?.0
A
V
CE
=
鈭?.0
V, I
C
=
鈭?0
mA
I
C
=
鈭?.0
A, I
B
=
鈭?0
mA
I
C
=
鈭?.0
A, I
B
=
鈭?0
mA
V
CB
=
鈭?0
V, I
E
= 0, f = 1.0 MHz
V
CE
=
鈭?.0
V, I
C
=
鈭?00
mA
V
CC
=
鈭?0
V, I
C
=
鈭?00
mA
I
B1
=
鈭捍
B2
=
鈭?0
mA,
V
BE(off)
= 2 to 3 V
70
135
81
鈭?00
MIN.
2SB1116, 1116A
TYP.
MAX.
鈭?00
鈭?00
600/400
鈭?50
鈭?.20
鈭?.9
25
120
0.07
0.70
0.07
鈭?00
鈭?.3
鈭?.2
mV
V
V
pF
MHz
碌
s
Unit
nA
nA
碌
s
碌
s
** Pulse test PW
鈮?/div>
350
碌
s, duty cycle
鈮?/div>
2%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16195EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
漏
2002
1998
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