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2SB1018A_06 Datasheet

  • 2SB1018A_06

  • Silicon NPN Triple Diffused Type (PCT Process)

  • 5頁

  • TOSHIBA

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2SB1018A
TOSHIBA Transistor
Silicon NPN Triple Diffused Type (PCT Process)
2SB1018A
High Current Switching Applications
Power Amplifier Applications
Unit: mm
鈥?/div>
鈥?/div>
鈥?/div>
High collector current: I
C
=
鈭?
A
Low collector saturation voltage: V
CE (sat)
=
鈭?.5
V (max) (I
C
=
鈭?
A)
Complementary to 2SD1411A
Absolute Maximum Ratings
(Tc = 25擄C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Ta = 25擄C
Tc = 25擄C
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
鈭?00
鈭?0
鈭?
鈭?
鈭?
2.0
30
150
鈭?5
to 150
Unit
V
V
V
A
A
W
擄C
擄C
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-10R1A
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(鈥淗andling Precautions鈥?Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-21

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