Note) Self-supported type package is also prepared.
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE1 *
h
FE2
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
I
C
= 鈭?
mA, I
E
=
0
I
C
= 鈭?
mA, I
B
=
0
V
CB
= 鈭?0
V, I
E
=
0
V
CE
= 鈭?0
V, I
B
=
0
V
EB
= 鈭?
V, I
C
=
0
V
CE
= 鈭?
V, I
C
= 鈭?
A
V
CE
= 鈭?
V, I
C
= 鈭?
mA
I
C
= 鈭?.5
A, I
B
= 鈭?/div>
0.15 A
I
C
= 鈭?
A, I
B
= 鈭?/div>
0.2 A
V
CE
= 鈭?
V, I
C
= 鈭?/div>
0.5 A, f
=
200 MHz
V
CB
= 鈭?0
V, I
E
=
0, f
=
1 MHz
150
45
80
10
鈭?
鈭?.5
V
V
MHz
pF
Min
鈭?0
鈭?0
鈭?
鈭?00
鈭?0
220
Typ
Max
Unit
V
V
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
錚?/div>
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE1
Q
80 to 160
R
120 to 220
Note) The part number in the parenthesis shows conventional part number.
Publication date: February 2003
SJD00035AED
(5.5)
1
next