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2SB0952A Datasheet

  • 2SB0952A

  • For Low-Voltage Switching

  • 85.84KB

  • 4頁(yè)

  • PANASONIC

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Power Transistors
2SB0952
(2SB952)
, 2SB0952A
(2SB952A)
Silicon PNP epitaxial planar type
For low-voltage switching
Unit: mm
鈻?/div>
Features
鈥?/div>
Low collector-emitter saturation voltage V
CE(sat)
鈥?/div>
High-speed switching
鈥?/div>
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
10.0
鹵0.3
1.5
鹵0.1
8.5
鹵0.2
6.0
鹵0.2
3.4
鹵0.3
1.0
鹵0.1
4.4
鹵0.5
2.0
鹵0.5
鈻?/div>
Absolute Maximum Ratings
T
C
=
25擄C
Parameter
Collector-base voltage
(Emitter open)
2SB0952
2SB0952A
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
T
a
=
25擄C
Junction temperature
Storage temperature
Symbol
V
CBO
Rating
鈭?0
鈭?0
鈭?0
鈭?0
鈭?
鈭?
鈭?2
30
1.3
150
鈭?5
to
+150
擄C
擄C
V
A
A
W
V
Unit
V
2.54
鹵0.3
1.4
鹵0.1
5.08
鹵0.5
1
2
3
0.8
鹵0.1
R = 0.5
R = 0.5
1.0
鹵0.1
0.4
鹵0.1
(8.5)
(6.0)
4.4
鹵0.5
0 to 0.4
Collector-emitter voltage 2SB0952
(Base open)
2SB0952A
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
(6.5)
1: Base
2: Collector
3: Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
鈻?/div>
Electrical Characteristics
T
C
=
25擄C
鹵
3擄C
Parameter
Collector-emitter voltage
(Base open)
Collector-base cutoff
current (Emitter open)
2SB0952
2SB0952A
2SB0952
2SB0952A
I
EBO
h
FE1
h
FE2 *
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Turn-on time
Storage time
Fall time
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
I
CBO
V
CB
= 鈭?0
V, I
E
=
0
V
CB
= 鈭?0
V, I
E
=
0
V
EB
= 鈭?
V, I
C
=
0
V
CE
= 鈭?
V, I
C
= 鈭?/div>
0.1 A
V
CE
= 鈭?
V, I
C
= 鈭?
A
I
C
= 鈭?
A, I
B
= 鈭?/div>
0.16 A
I
C
= 鈭?
A, I
B
= 鈭?/div>
0.16 A
V
CE
= 鈭?0
V, I
C
= 鈭?/div>
0.5 A, f
=
10 MHz
V
CB
= 鈭?0
V, I
E
= 0,
f
=
1 MHz
I
C
= 鈭?
A
I
B1
= 鈭?6
mA, I
B2
=
66 mA
V
CC
= 鈭?0
V
150
140
0.1
0.5
0.1
45
60
260
鈭?/div>
0.6
鈭?.5
V
V
MHz
MHz
碌s
碌s
碌s
Symbol
V
CEO
Conditions
I
C
= 鈭?0
mA, I
B
=
0
Min
鈭?0
鈭?0
鈭?0
鈭?0
鈭?0
碌A(chǔ)
錚?/div>
碌A(chǔ)
Typ
Max
Unit
V
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE2
R
60 to 120
Q
90 to 180
P
130 to 260
Note) The part numbers in the parenthesis show conventional part number.
Publication date: March 2003
SJD00031AED
(7.6)
(1.5)
1.3
14.4
鹵0.5
3.0
+0.4
鈥?.2
1.5
+0
鈥?.4
1

2SB0952A相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    Silicon PNP epitaxial planer type
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