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2SB0951A Datasheet

  • 2SB0951A

  • For midium-speed switching

  • 4頁(yè)

  • PANASONIC

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Power Transistors
2SB0951
(2SB951)
, 2SB0951A
(2SB951A)
Silicon PNP epitaxial planar type darlington
0.7
鹵0.1
For midium-speed switching
Complementary to 2SD1277 and 2SD1277A
鈻?/div>
Features
鈥?/div>
High forward current transfer ratio h
FE
鈥?/div>
High-speed switching
鈥?/div>
Full-pack package which can be installed to the heat sink with one screw
16.7
鹵0.3
Unit: mm
10.0
鹵0.2
5.5
鹵0.2
4.2
鹵0.2
4.2
鹵0.2
2.7
鹵0.2
7.5
鹵0.2
蠁
3.1
鹵0.1
Solder Dip
(4.0)
14.0
鹵0.5
鈻?/div>
Absolute Maximum Ratings
T
C
=
25擄C
Parameter
Collector-base voltage
(Emitter open)
2SB0951
2SB0951A
V
CEO
V
EBO
I
C
I
CP
P
C
T
a
=
25擄C
T
j
T
stg
Symbol
V
CBO
Rating
鈭?0
鈭?0
鈭?0
鈭?0
鈭?
鈭?
鈭?2
45
2
150
鈭?5
to
+150
擄C
擄C
V
A
A
W
V
Unit
V
1.4
鹵0.1
1.3
鹵0.2
0.5
+0.2
鈥?.1
0.8
鹵0.1
2.54
鹵0.3
5.08
鹵0.5
Collector-emitter voltage 2SB0951
(Base open)
2SB0951A
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
Junction temperature
Storage temperature
1 2 3
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Internal Connection
C
B
E
鈻?/div>
Electrical Characteristics
T
C
=
25擄C
鹵
3擄C
Parameter
Collector-emitter voltage
(Base open)
Collector-base cutoff
current (Emitter open)
2SB0951
2SB0951A
2SB0951
2SB0951A
I
EBO
h
FE1 *
h
FE2
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
I
CBO
V
CB
= 鈭?0
V, I
E
=
0
V
CB
= 鈭?0
V, I
E
=
0
V
EB
= 鈭?
V, I
C
=
0
V
CE
= 鈭?
V, I
C
= 鈭?
A
V
CE
= 鈭?
V, I
C
= 鈭?
A
I
C
= 鈭?
A, I
B
= 鈭?
mA
I
C
= 鈭?
A, I
B
= 鈭?
mA
V
CE
= 鈭?0
V, I
C
= 鈭?
A, f
=
1 MHz
I
C
= 鈭?
A, I
B1
= 鈭?
mA, I
B2
=
8 mA
V
CC
= 鈭?0
V
20
0.5
2.0
1.0
1 000
500
鈭?.5
鈭?.0
V
V
MHz
碌s
碌s
碌s
Symbol
V
CEO
Conditions
I
C
= 鈭?0
mA, I
B
=
0
Min
鈭?0
鈭?0
鈭?00
鈭?00
鈭?
10 000
mA
錚?/div>
碌A(chǔ)
Typ
Max
Unit
V
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE1
R
1 000 to 2 500
Q
P
2 000 to 5 000 4 000 to 10 000
Note) The part numbers in the parenthesis show conventional part number.
Publication date: April 2003
SJD00030BED
1

2SB0951A相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
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    Silicon PNP epitaxial planer type
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    Silicon PNP epitaxial planar type
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    For low-frequency general amplification
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    For low-frequency general amplification
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  • 英文版
    For low-frequency general amplification
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  • 英文版
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  • 英文版
    Silicon PNP epitaxial planar type
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  • 英文版
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    For general amplification
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    Silicon PNP epitaxial planer type(For low-frequency and low-...
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  • 英文版
    Silicon PNP epitaxial planer type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planer type
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    Silicon PNP epitaxial planer type(For low-frequency amplific...
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