Power Transistors
2SB0939
(2SB939)
, 2SB0939A
(2SB939A)
Silicon PNP epitaxial planar type Darlington
For midium-speed power switching
Complementary to 2SD1262, 2SD1262A
10.0
鹵0.3
1.5
鹵0.1
Unit: mm
8.5
鹵0.2
6.0
鹵0.2
3.4
鹵0.3
1.0
鹵0.1
Collector-base voltage
(Emitter open)
2SB0939
2SB0939A
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
鈭?0
鈭?0
鈭?0
鈭?0
鈭?
鈭?
鈭?2
45
1.3
V
(6.5)
Collector-emitter voltage 2SB0939
(Base open)
2SB0939A
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
T
a
=
25擄C
Junction temperature
Storage temperature
V
V
A
A
W
B
擄C
擄C
E
1 : Base
2 : Collector
3 : Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
Internal Connection
C
T
j
T
stg
150
鈭?5
to
+150
鈻?/div>
Electrical Characteristics
T
C
=
25擄C
鹵
3擄C
Parameter
Collector-emitter voltage
(Base open)
Collector-base cut-off
current (Emitter open)
2SB0939
2SB0939A
2SB0939
2SB0939A
I
EBO
h
FE1 *
h
FE2
Base-emitter saturation voltage
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Strage time
Fall time
V
BE(sat)
V
CE(sat)
f
T
t
on
t
stg
t
f
I
CBO
V
CB
=
鈭?0
V,I
E
= 0
V
CB
=
鈭?0
V,I
E
= 0
V
EB
=
鈭?
V,I
C
= 0
V
CE
= 鈭?
V, I
C
= 鈭?
A
V
CE
= 鈭?
V, I
C
= 鈭?
A
I
C
=
鈭?
A,I
B
=
鈭?
mA
I
C
= 鈭?
A, I
B
= 鈭?
mA
V
CE
= 鈭?0
V, I
C
= 鈭?.5
A, f
=
1 MHz
I
C
= 鈭?
A,
I
B1
= 鈭?
mA, I
B2
= 8
mA
V
CC
= 鈭?0
V
20
0.5
2
1
2 000
500
鈭?
鈭?.5
V
V
MHz
碌s
碌s
碌s
Symbol
V
CEO
Conditions
I
C
= 鈭?0
mA, I
B
=
0
Min
鈭?0
鈭?0
鈭?00
鈭?00
鈭?
10 000
mA
錚?/div>
碌A(chǔ)
Typ
Max
Unit
V
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE1
Q
P
2 000 to 5 000 4 000 to 10 000
Note) The part number in the parenthesis shows conventional part number.
(7.6)
Parameter
Symbol
Rating
Unit
(1.5)
鈻?/div>
Absolute Maximum Ratings
T
C
=
25擄C
2.0
鹵0.5
鈥?/div>
High forward current transfer ratio h
FE
鈥?/div>
High-speed switching
鈥?/div>
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
4.4
鹵0.5
1
2
0.8
鹵0.1
R = 0.5
R = 0.5
2.54
鹵0.3
1.0
鹵0.1
1.4
鹵0.1
0.4
鹵0.1
5.08
鹵0.5
(8.5)
(6.0)
1.3
3
4.4
鹵0.5
0 to 0.4
14.4
鹵0.5
鈻?/div>
Features
3.0
+0.4
鈥?.2
1.5
+0
鈥?.4
Publication date: March 2003
SJD00020BED
1
2SB0939A相關(guān)型號(hào)PDF文件下載
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