thickness of 1.7 mm for the collector portion.
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-emitter voltage
(Base open)
2SB0789
2SB0789A
V
EBO
h
FE1 *2
h
FE2
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
*1
*1
Symbol
V
CEO
Conditions
I
C
= 鈭?00 碌A,
I
B
=
0
I
E
= 鈭?0 碌A,
I
C
=
0
V
CE
= 鈭?0
V, I
C
= 鈭?50
mA
V
CE
= 鈭?
V, I
C
= 鈭?00
mA
I
C
= 鈭?00
mA, I
B
= 鈭?0
mA
I
C
= 鈭?00
mA, I
B
= 鈭?0
mA
V
CB
= 鈭?0
V, I
E
=
50 mA, f
=
200 MHz
V
CB
= 鈭?0
V, I
E
=
0, f
=
1 MHz
Min
鈭?00
鈭?20
鈭?
90
50
Typ
Max
Unit
V
Emitter-base voltage (Collector open)
Forward current transfer ratio
*1
V
220
鈭?/div>
0.2
鈭?/div>
0.85
120
30
鈭?/div>
0.6
鈭?.20
錚?/div>
V
V
MHz
pF
V
CE(sat)
V
BE(sat)
f
T
C
ob
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
h
FE1
Q
90 to 155
R
130 to 220
Note) The part number in the parenthesis shows conventional part number.
Publication date: December 2002
SJC00056CED
0.4 max.
2.6
鹵0.1
1
1
2
3
