Notics:This is not a final specification.
Some parametric limits are subject to change. 鈥?/div>
DESCRIPTION
鈥?SA2068 is a super mini package resin sealed
silicon PNP epitaxial transistor,
It is designed for low frequency application.
Since it is a super-thin flat lead type package,a high-density
鈥僲ounting are possible.
0.4
Complementary with 2SA1235A.
鈶?/div>
鈶?/div>
鈶?/div>
0.25
0.2
0.8
0.2
2SA2068
FOR LOW鈥?/div>
FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
OUTLINE DRAWING
Unit
錛氾拷½錕斤拷½錕?/div>
鈼?Super-thin flat lead type package.鈥僼=0.45mm
鈼?Excellent linearly of DC forward current gain.
鈼?Low collector to emitter saturation voltage
0.45
VCE(sat)=-0.3V max (@Ic=-100mA/IB=-10mA)
APPLICATION
For hybrid IC,small type machine low frequency voltage amplify
application.
MAXIMUM RATINGS
錛圱a=25鈩冿級(jí)
Symbol
V
CBO
V
CEO
V
EBO
I
O
0.4
FEATURE
1.2
0.8
JEITA
錛?/div>
Ratings
-50
-6
-50
-200
100
錛?25
-55鈭鹼紜125
Unit
V
V
V
mA
mW
鈩?/div>
鈩?/div>
Parameter
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
TERMINAL CONNECTER
鈶?/div>
錛欱ASE
鈶?/div>
錛欵MITTER
鈶?/div>
錛欳OLLECTOR
P
c
T
j
T
stg
ELECTRICAL CHARACTERISTICS
錛圱a=25鈩?/div>
錛?/div>
Limits
Min
Collector to Emitter Breakdown voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
C to E saturation voltage
Gain bandwidth product
Collector output capacitance
Noise figure
V(BR)
CEO
I
CBO
I
EBO
hFE
hFE
VCE(sat)
fT
Cob
NF
I
C
=-100渭A, R
V
V
V
V
CB
EB
BE
Typ
鈥?/div>
-
-
鈥?/div>
-
-
200
4.0
-
Max
鈥?/div>
-0.1
-0.1
800
-
- 0.3
-
-
20
V
渭A
渭A
-
-
v
MHz
pF
dB
=鈭?/div>
-50
-
-
150
90
-
-
-
-
=-50V, I
E
=0mA
=-6V, I
C
=0mA
=-6V, I
C
=-1mA
=-6V, I
C
=-0.1mA
=-6V, I
E
=10mA
=-6V, I
E
=0mA,f=1MHz
CE
CE
I
C
=-100mA, I
B
=-10mA
V
V
V
CE
CB
CE
=-6V, I
E
=0.3mA,f=100Hz,RG=10k惟
鈥冣€冣€?/div>
鈥冣€?/div>
鈥冣€冣€冣€冣€冣€冣€冣€冣€冣€冣€冣€冣€冣€冣€冣€冣€冣€冣€冣€冣€冣€冣€冣€冣€冣€冣€冣€冣€冣€冣€冣€冣€冣€冣€冣€冣€冣€冣€?/div>
鈥燴€僆t shows hFE classification in below table.
Item
hFE
Abbrivation
E
150鈭?00
ME
F
250鈭?00
MF
G
400鈭?00
MG
ISAHAYA
鈥僂LECTRONICS鈥僀ORPORATION
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