DATA SHEET
SILICON TRANSISTOR
2SA1897
PNP SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
The 2SA1897 features a low saturation voltage and is available
for high current control in small dimension. This transistor is ideal
for high efficiency DC/DC converters due to fast switching speed.
PACKAGE DRAWING (UNIT: mm)
FEATURES
鈥?High current capacitance
鈥?Low collector saturation voltage and high h
FE
鈥?Insulation type package supportable for radial taping
QUALITY GRADES
鈥?Standard
Please refer to 鈥淨(jìng)uality Grades on NEC Semiconductor Devices鈥?/div>
(Document No. C11531E) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25擄C)
擄
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
T
C
= 25擄C
PW
鈮?/div>
10 ms, duty cycle
鈮?/div>
50 %
T
C
= 25擄C
Conditions
Ratings
鈭?0
鈭?0
鈭?0
鈭?.0
鈭?.0
鈭?.5
1.0
T
C
= 25擄C
6.0
150
鈭?5
to +150
Unit
V
V
V
A
A
Base current (DC)
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
I
B(DC)
P
T
P
T
T
j
T
stg
A
W
W
擄C
擄C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16145EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
漏
2002
1998
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