DATA SHEET
SILICON POWER TRANSISTOR
2SA1845
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SA1845 is a power transistor developed for high-speed switching and features a high h
FE
at low V
CE(sat)
.
This transistor is ideal for use as a driver in DC/DC converters and actuators.
In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus
contributing to mounting cost reduction.
FEATURES
鈥?Auto-mounting possible in radial taping specifications
鈥?Resin-molded insulation type package with power rating of 1.8 W in stand-alone conditions
鈥?High h
FE
and low V
CE(sat)
:
V
CE(sat)
鈮?鈭?.3
V
@I
C
=
鈭?.0
A, I
B
=
鈭?.15
A
h
FE
鈮?/div>
100
@V
CE
=
鈭?.0
V, I
C
=
鈭?.0
A
鈥?Fast switching speed
ABSOLUTE MAXIMUM RATINGS (Ta = 25擄C)
擄
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
I
B(DC)
P
T
T
j
T
stg
Ta = 25擄C
PW
鈮?/div>
300
碌
s, duty cycle
鈮?/div>
2%
Conditions
Ratings
鈭?50
鈭?00
鈭?.0
鈭?.0
鈭?0
鈭?.5
1.8
150
鈭?5
to +150
Unit
V
V
V
A
A
A
W
擄C
擄C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15592EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
漏
2002
1998
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