DATA SHEET
SILICON POWER TRANSISTOR
2SA1742
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SA1742 is a power transistor developed for high-speed
switching and features a high h
FE
at low V
CE(sat)
. This transistor is ideal
for use as a driver in DC/DC converters and actuators.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting cost.
ORDERING INFORMATION
Part No.
2SA1742
Package
Isolated TO-220
(Isolated TO-220)
FEATURES
鈥?High h
FE
and low V
CE(sat)
:
h
FE
鈮?/div>
100 MIN. @V
CE
=
鈭?.0
V, I
C
=
鈭?.5
A
V
CE(sat)
鈮?鈭?.3
V MAX. @I
C
=
鈭?.0
V, I
B
=
鈭?.2
A
鈥?Full-mold package that does not require an insulating board or
bushing
ABSOLUTE MAXIMUM RATINGS (T
A
= 25擄C)
擄
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
I
B(DC)
P
T
T
j
T
stg
T
C
= 25擄C
T
A
= 25擄C
PW
鈮?/div>
300
碌
s,
duty cycle
鈮?/div>
10%
Conditions
Ratings
鈭?00
鈭?0
鈭?.0
鈭?.0
鈭?4
鈭?.5
30
2.0
150
鈭?5
to +150
Unit
V
V
V
A
A
A
W
W
擄C
擄C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14858EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
漏
2002
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