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2SA1650 Datasheet

  • 2SA1650

  • PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

  • 6頁(yè)

  • NEC   NEC

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DATA SHEET
SILICON POWER TRANSISTOR
2SA1650
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SA1650 is a mold power transistor developed for high-
speed switching and features a very low collector-to-emitter
saturation.
This transistor is ideal for use in switching power
supplies, DC/DC converters, motor drivers, solenoid drivers, and
other low-voltage power supply devices, as well as for high-current
switching.
PACKAGE DRAWING (UNIT: mm)
FEATURES
鈥?Mold package that does not require an insulating board or
insulation bushing
鈥?Fast switching speed
鈥?Low collector-to-emitter saturation voltage:
V
CE(sat)
鈮?鈭?.3
V (MAX.) @I
C
=
鈭?
A
QUALITY GRADES
鈥?Standard
Please refer to 鈥淨(jìng)uality Grades on NEC Semiconductor Devices鈥?/div>
(Document No. C11531E) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
Electrode Connection
<1> Base
<2> Collector
<3> Emitter
ABSOLUTE MAXIMUM RATINGS (Ta = 25擄C)
擄
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector current
Base current
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
D(DC)
I
C(pulse)
I
B(DC)
P
T
P
T
T
j
T
stg
Tc = 25擄C
Ta = 25擄C
PW
鈮?/div>
300
碌
s, duty cycle
鈮?/div>
10%
Conditions
Ratings
鈭?50
鈭?00
鈭?.0
鈭?.0
鈭?0
鈭?.5
25
2.0
150
鈭?5
to +150
Unit
V
V
V
A
A
A
W
W
擄C
擄C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16122EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
漏
2002

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